Siemens ILD32, ILQ32 Datasheet

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Ω

DUAL CHANNEL

QUAD CHANNEL

ILD32

ILQ32

PHOTODARLINGTON OPTOCOUPLER

FEATURES

• Very High Current Transfer Ratio, 500% Min.

• Isolation T est V oltage, 5300 VA C

• High Isolation Resistance, 10

11

RMS

Typical

• Low Coupling Capacitance

• Standard Plastic DIP Package

• Underwriters Lab File #E52744

V

• VDE 0884 Available with Option 1

DE

Maximum Ratings (Each Channel)
Emitter

Peak Reverse Voltage........................................3 V

Continuous Forward Current.........................60 mA

Power Dissipation at 25 °
Derate Linearly from 25 °

C.........................100 mW

C....................1.33 mW/ ° C

Detector

Collector-Emitter Breakdown Voltage .............30 V

Collector (Load) Current..............................125 mA

Power Dissipation at 25 °
Derate Linearly from 25 °

C Ambient...........150 mW

C......................2.0 mW/ ° C

Package

Isolation Test V oltage (between emitter

and detector refer to standard climate
23 °

C/50%RH, DIN 50014)

t=1 sec...........................................5300 VAC

RMS

Creepage............................................... 7 mm min.

Clearance...............................................7 mm min.

Comparative Tracking Index per

DIN IEC 112/VDE303, part 1........................ ≥

Isolation Resistance

V

=500V, T

IO

V

=500V, T

IO

=25 ° C ......................... R

A

=100 ° C ....................... R

A

IO
IO

=10
=10

175

12
11

Total Dissipation at 25 ° C Ambient

ILD32 .....................................................400 mW

ILQ32 .....................................................500 mW

Derate Linearly from 25 °

C

ILD32 ...............................................5.33 mW/ °

ILQ32 ...............................................6.67 mW/ °

Storage Temperature ...................–55 °

Operating Temperature ...............–55 °

Lead Soldering Time at 260 °

C....................10 sec.

C to +150 ° C
C to +100 ° C

DESCRIPTION

The ILD32/ILQ32 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor . Switching can be achieved
while maintaining a high degree of isolation
between driving and load circuits. These optocou­plers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic fields.

The ILD32 has two isolated channels in a DIP pack­age, and the ILQ32 has four channels. These
devices can be used to replace 4N32s or 4N33s in
applications calling for several single channel opto­couplers on a board.

Dimensions in inches (mm)

Dual
Channel

.268 (6.81)
.255 (6.48)

4°

Typ.

.022 (.56)
.018 (.46)

Quad
Channel

268 (6.81)
255 (6.48)

4°

Typ.

.022 (.56)
.018 (.46)

Ω
Ω

Electrical Characteristics (T

34

65
.390 (9.91)

.379 (9.63)

.045 (1.14)
.030 (.76)

.045 (1.14)
.030 (.76)

.100 (2.54)

.100 (2.54)

Typ.

Typ.

87

.150 (3.81)
.130 (3.30)

.790 (20.07)
.779 (19.77 )

=25 ° C)

A

Cathode

Cathode

.040 (1.02)
.030 (.76 )

Anode

Anode

1

2

3

4

.305 typ.

(7.75) typ.

3°–9°

Pin One I.D.

.150 (3.81)
.130 (3.30)

10°
Typ.

.012 (.30)
.008 (.20)

.040 (1.02)
.030 (.76 )

Pin One I.D.

12

Symbol Min. Typ. Max. Unit Condition

Emitter

Forward Voltage V

C

Reverse Current I

C

Capacitance C

F

R

O

1.25 1.5 V I

0.1 100 µ AV
25 pF V

Detector

Breakdown Voltage
Collector-Emitter

Breakdown Voltage
Emitter-Collector

Collector-Emitter
Leakage Current

BV

BV

I

CEO

CEO

ECO

30 V I

510 VI

1.0 100 nA V

Package

Current Transfer Ratio CTR 500 % I
Collector Emitter

Saturation Voltage
Isolation Capacitance C
Turn-On Time t
Turn-Off Time t

5–1

V

on
off

CEsat

ISOL

0.5 pF
15
30

8

Emitter

7

Collector

6

Collector

5

Emitter

.135 (3.43)
.115 (2.92)

Anode

1

Cathode

2
3

Cathode

4

Anode

5

Anode

6

Cathode

7

Cathode

8

Anode

.305 typ.
(7.75) typ.

10°
Typ.

3°–9°

.012 (.30)
.008 (.20)

1.0 V I

µ sV
µ sI

Emitter

16

Collector

15
14

Collector

13

Emitter
Emitter

12

Collector

11
10

Collector

9

Emitter

.135 (3.43
.115 (2.92

=10 mA

F

=3.0 V

R

=0 V

R

=100 µ A,

C

I

=0

F

=100 µ A

E

CE

I

=0

F

=10 mA

F

=2 mA,

C

I

=8 mA

F

CC

=5 mA,

F

R

=100 Ω

L

=10V,

=10 V

Figure 1. Forward voltage versus forward current

V

O

V

I

1.4

1.3

Ta = -55°C

1.2

1.1

Ta = 25°C

1.0

0.9

Ta = 85°C

0.8

VF - Forward Voltage - V

0.7

IF - Forward Current - mA

Figure 2. Normalized non-saturated and saturated
CTRce at TA=25 ° C versus LED current

1.2

Normalized to:

Vce = 10 V

1.0
IF = 10 mA

0.8

Ta = 25 °C

Vce = 10V

0.6

0.4

0.2

Vce =1V

0.0

NCTRce - Normalized CTR

.1 1 10 100 1000

IF - LED Current - mA

Figure 5. High to low propagation delay versus
collector load resistamce and LED current

20

15

10

dela y - µs

100101.1

tpHL - High/Low Propagation

100Ω

5

0

0 5 10 15 20

1KΩ

IF - LED Current - mA

Ta = 25°C
Vcc = 10 V
Vth = 1.5 V

Figure 6. Switching timing

I

F

t

D

t

O

R

t

PLH

VTH=1.5 V

t

PHL

t

t

S

F

Figure 3. Normalized non-saturated and saturated
collector-emitter current versus LED current

10

1

.1

.01

NIce - Normalized Ice

.001

Normalized to:

Ta = 25°C
IF = 10 mA

V ce = 10 V

IF - LE D Cur rent - mA

Vce = 10 V

V ce = 1V

101.1

100

Figure 4. Low to high propagation delay versus
collector load resistance and LED current

80

Ta = 2 5°C, Vcc = 10 V
Vth = 1.5 V

60

40

Dela y - µs

20

1K Ω

220 Ω

470 Ω

Figure 7. Switching schematic

VCC=10

F=10 KHz,
DF=50%

=5 mA

F

R

L

V

tpLH - Low/High Propagation

0

0 5 10 15 20

IF - LED Current - mA

100Ω

ILD32/ILQ32

5–2