Siemens ILD55, ILQ31, ILQ30, ILQ55, IL55 Datasheet

...
FEATURES
• Current T ransfer Ratio IL/ILD/ILQ30/55, 100% min. IL/ILD/ILQ31, 200% min.
• Fast Rise Time, 10 µ S
• Fast Fall Time, 35 µ S
• Single, Dual and Quad Channel
• Solid State Reliability
• Standard DIP Packages
• Underwriters Lab File #E52744
V
DE
VDE 0884 Available with Option 1
DESCRIPTION
The IL30/31/55, ILD30/31/55, and ILQ30/31/55 are optically coupled isolators wih Gallium Arsenide infrared emitters and silicon photodarlington sen­sors. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields.
The Il30/31/55 are equivalent to MCA230/MCA231/ MCA255. The ILD30/31/55 re designed to reduce board space requirements in high density applica­tions.
Maximum Ratings Emitter (each channel)
Peak Reverse Voltage........................................3 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25 ° Derate Linearly from 25 °
C......................... 100 mW
C ...................1.33 mW/ ° C
Detector (each channel)
Collector-Emitter Breakdown Voltage
IL/D/Q30.......................................................30 V
IL/D/Q55.......................................................55 V
Collector (Load) Current.............................125 mA
Power Dissipation at 25 ° Derate Linearly from 25 °
C Ambient........... 150 mW
C .....................2.0 mW/ ° C
Package
Total Package Power Dissipation at 25 ° C
IL30/31/55................................................250 mW
ILD30/31/55.............................................400 mW
ILQ30/31/55............................................. 500 mW
Derate Linearly from 25 °
IL30/31/55............................................3.3 mW/ °
ILD30/31/55.......................................5.33 mW/ °
ILQ30/31/55....................................... 6.67 mW/ °
Isolation Test Voltage........................ 5300 VAC
C
C C C
RMS
Creepage................................................7 mm min.
Clearance...............................................7 mm min.
Comparative Tracking Index............................. 175
Storage Temperature...................–55 °
Operating Temperature................–55 °
Lead Soldering Time at 260 °
C ....................10 sec.
C to +125 ° C C to +100 ° C
SINGLE CHANNEL
DUAL CHANNEL
QUAD CHANNEL
PHOTODARLINGTON OPTOCOUPLER
Dimensions in inches (mm)
Single Channel
3
.248 (6.30) .256 (6.50)
4
5
.335 (8.50) .343 (8.70)
.039
(1.00)
min.
4°
typ.
.018 (0.45) .022 (0.55)
Dual Channel
34
.255 (6.48) .268 (6.81)
65
.379 (9.63) .390 (9.91)
.030 (.76) .045 (1.14)
4°
typ.
.018 (.46) .022 (.56)
Quad Channel
67
8
.240 (6.10) .260 (6.60)
9
10
11
.780 (19.81) .800 (20.32)
.040 (1.02) .050 (1.27)
.280 (7.11) .330 (8.38)
.014
(.35)
typ.
.016 (.41) .020 (.51)
.048 (1.22) .052 (1.32)
.033 (.84)
Pin one I.D.
12
6
.130 (3.30) .150 (3.81)
.020 (.051) min.
.031 (0.80) .035 (0.90)
.100 (2.54) typ.
Pin one I.D.
1
2
87
.130 (3.30 .150 (3.81)
.030 (.76 ) .040 (1.02)
.100 (2.54) typ.
5
12
typ.
4
13
3
14
.034 (.86)
Anode
Cathode
NC
Anode Cathode Cathode
Anode
3°–9°
1
2
16
15
.020 (.51) .030 (.76)
.100 (2.54) typ.
IL30/31/55
ILD30/31/55
ILQ30/31/55
typ.
.305 typ.
(7.75) typ.
10° typ.
.008 (.20) .012 (.30)
Anode
Anode
Anode
Anode
6
NC
5
Collector
4
Emitter
.110 (2.79) .150 (3.81)
8
Emitter
7
Collector Collector
6 5
Emitter
.115 (2.92) .135 (3.43)
1 2 3 4 5 6
7 8
.300 (7.62)
typ.
3° to 9°
.008 (.20) .012 (.31)
16 15 14 13 12 11
10 9
Emitter Collector Collector Emitter Emitter Collector Collector Emitter
.130 (3.30) .150 (3.81)
1 2 3
.300 (7.62)
18° typ.
.010 (.25) .014 (.35)
.300 (7.62) .347 (8.82)
1 2 3 4
Pin
Cathode
one
I.D.
Cathode
Cathode Cathode
.130 (3.30) .150 (3.81)
.0255 (.65) typ.
5–1
Electrical Characteristics
(T
=25 ° C)
A
Symbol Min. Typ. Max.. Unit Condition
GaAs Emitter (per channel)
Forward Voltage V Reverse Current I Capacitance C
F
R
O
1.25 1.5 V I
0.1 10 25 pF V
Detector (per channel)
Collector-Emitter Breakdown Voltage BV Collector-Emitter Leakage Current I
CEO
Collector-Emitter Capacitance C
CEO
CE
30/55 V I
1.0 100 nA V
3.4 pF V
Package
Current Transfer Ratio IL/D/Q30/55 IL/D/Q31
Collector-Emitter Saturation Voltage V
CTR
CEsat
100 200
400 400
0.9 1.0 V I
Isolation Test Voltage 5300 VAC
Isolation Resistance R Coupling Capacitance C Rise Time t Fall Time t
ISOL
ISOL R F
12
10
0.5 pF 10 35
=20 mA
F
µ AV
% %
RM
S
=3.0 V
R
=0 V
R
=100 µ A
C
=10 V, I
CE
=10 V, f=1 MHz
CE
I
=10 mA,V
F
I
=10 mA,V
F
=50 mA, I
C
W
µ sV µ s
CC
R
=100 Ω
L
=13.5 V, I
=0
F
=5 V
CE
=5 V
CE
=50 mA
F
=50 mA,
F
Figure 1. Forward voltage versus forward current
1.4
1.3
Ta = -55°C
1.2
1.1
Ta = 25°C
1.0
0.9
Ta = 85°C
0.8
VF - Forward Voltage - V
0.7
100101.1
IF - Forward Current - mA
Figure 2. Normalized non-saturated and saturated CTRce at T
=25 ° C versus LED current
A
1.2 Normalized to:
Vce = 5 V
1.0
IF = 10 mA Ta = 25 °C
0.8
Vce = 5V
0.6
0.4
0.2
0.0
NCTRce - Normalized CTR
.1 1 10 100 1000
Vce =1V
IF - LED Current - mA
Figure 3. Normalized non-saturated and saturated collector-emitter current versus LED current
10
Normalized to:
Ta = 25°C IF = 10 mA
1
Vce = 5 V
.1
.01
NIce - Normalized Ice
.001
IF - LED Current - mA
Vce = 5 V
Vce = 1V
101.1
100
Figure 4. Normalized collector-base photocurrent versus LED current
10
Normalized to:
Ta = 25°C Vcb = 3.5 V
1
IF = 10 mA
.1
.01
NIcb - Normalized Icb
.001
.1 1 10 100
IF - LED Current - mA
5–2
IL/D/Q30/31/55
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