Siemens ILD256 Datasheet
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y
)
.120±.002
.
ILD256
DUAL AC INPUT PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
NE
FEATURES
• Each Channel: Guaranteed CTR Symmetry,
2:1 Maximum
• Bidirectional AC Input
• Industry Standard SOIC-8 Surface Mountable
Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard 481-2)
DESCRIPTION
The ILD256 is a dual channel optocoupler. Each
channel consists of two infrared emitters connected in anti-parallel and coupled to a silicon
NPN phototransistor detector.
These circuit elements are constructed with a standard SOIC-8 footprint.
The product is well suited for telecom applications
such as ring detection or off/on hook status, given
its bidirectional LED input and guaranteed current
transfer ratio (CTR) of 20% at I
= 10 mA.
F
Maximum Ratings
Emitter (Each Channel)
Continuous Forward Current.........................30 mA
Power Dissipation at 25 °
Derate Linearly from 25 °
C............................45 mW
C......................0.5 mW/ ° C
Detector (Each Channel)
Collector-Emitter Breakdown Voltage...............70 V
Emitter-Collector Breakdown Voltage.................7 V
Power Dissipation ........................................55 mW
Derate Linearly from 25 °
C....................0.55 mW/ ° C
Package
Total Package Dissipation at 25 ° C Ambient
(LED + Detector) ....................................200 mW
Derate Linearly from 25 °
Storage Temperature................... –55 °
Operating Temperature ...............–55 °
Soldering Time at 260 °
C......................2.0 mW/ ° C
C to +150 ° C
C to +100 ° C
C.............................10 sec.
Dimensions in inches (mm)
(3.05±.05)
1
A/K
K/A
.240
(6.10)
Pin One I.D.
.154±.002
C
L
(3.91±.05)
.016 (.41)
A/K
K/A
2
3
4
7°
.230±.002
(5.84±.05)
.015±.002
(.38±.05)
40°
.0585±.002
(1.49±.05)
.004 (.10)
.008 (.20)
.050(1.27) Typ.
040 (1.02)
.008 (.20)
.020±.004
(.51±.10)
5°Max.
R.010
(.25) Max.
Lead coplanarit
±.001 Max.
2 Plcs.
Characteristics (T
Emitter (Each Channel)
Forward Voltage V
Reverse Current I
Detector (Each Channel)
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Leakage Current,
Collector-Emitter
Package
DC Current Transfer CTR 20 % I
Symmetry
CTR at + 10 mA
CTR at -10 mA
=25 ° C)
A
Sym Min. Typ. Max. Unit Condition
1.2 1.55 V I
0.1 100 mA V
70
7
550nA V
0.5 1.0 2.0
V
V
R
BV
BV
I
CEO
F
CEO
ECO
C
8
7
E
6
C
5
E
.125±.002
(3.18±.05
= ± 10 mA
F
=6.0 V
R
I
=10 µ A
C
I
=10 µ A
E
=10 V
CE
= ± 10 mA,
F
V
=5 V
CE
Saturation Voltage,
Collector-Emitter
Isolation Voltage,
Input to Output
V
V
CEsat
2500 VAC
IO
0.4 I
RMS
AUGUST 1995
= ± 16 mA,
F
I
=2 mA
C
t=1 min.
5–1
Figure 1. LED forward current versus forward voltage
60
40
85°C
20
25°C
0
-55°C
-20
-40
-60
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
IF - LED Forward Current - mA
VF - LED Forward Voltage - V
Figure 2. Forward voltage versus forward current
1.4
1.3
1.2
1.1
1.0
0.9
Vf-Forward Voltage - V
0.8
0.7
.1 1 10 100
Ta = -55°C
Ta = 25°C
Ta = 100°C
If - Forward Current - mA
Figure 5. Normalized saturated CTR
1.0
0.8
Ta = 25°C
Ta = 50°C
Ta = 70°C
Vce(sat) = 0.4V
Ta = 100°C
0.6
0.4
Normalized CTR
0.2
Normalized to:
If = 10 mA. Vce =10V
Ta = 25°C
0.0
.1 1 10 100
If - LED Current - mA
Figure 6. Normalized CTRcb
1.5
Normalized to:
If=10mA, Ta=25°C
1.0
0.5
Normalized CTRcb
0.0
.1 1 10 100
If - LED Current -mA
25°C
50°C
70°C
Figure 3. Peak LED current versus duty factor, Tau
10000
Duty Factor
.005
1000
If(pk) - Peak LED Current - mA
.01
.02
.05
.1
.2
.5
100
10
10-610-510-410-310-210-110010
t - LED Pulse Duration - s
τ
t
τ
DF = /t
1
Figure 4. Normalized CTR versus If and Ta
2.0
Ta = 25°C
1.5
Ta = 50°C
Ta = 70°C
Ta = 100°C
1.0
Normalized CTR
0.5
Normalized to :
If = 10 mA, Vce =10V
Ta = 25°C
Figure 7. Photocurrent versus LED current
1000
100
10
25°C
70°C
1
Icb - Photocurrent - µA
.1
.1 1 10 100
If - LED Current - mA
Figure 8. Base current versus If and HFE
700
Vce=0.4V, Ta=25°C
600
500
400
300
HFE - Transistor Gain
200
100
10
1
If- LED Current-mA
0.0
.1 1 10 100
If - LED Current - mA
5–2
100
1 10 100 1000
Ib - Base Current - µA
.1
ILD256
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