Siemens ILCT6 Datasheet

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ILCT6

DUAL PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

Dimensions in inches (mm)

• Current Transfer Ratio, 50% Typical

• Leakage Current, 1 nA Typ.

34

• Two Isolated Channels Per Package

• Direct Replacement for MCT6

• Underwriters Lab File #E52744

V

DE

• VDE 0884 Available with Option1
DESCRIPTION

The ILCT6 is a two channel opto isolator for high
density applications. Each channel consists of an
optically coupled pair with a gallium arsenide infra­red LED and a silicon NPN phototransistor. Signal

268 (6.81)
255 (6.48)

65

.390 (9.91)
.379 (9.63)

.045 (1.14)
.030 (.76)

information, including a DC level, can be transmit­ted by the device while maintaining a high degree
of electrical isolation between input and output.

The ILCT6 is especially designed for driving
medium-speed logic, where it may be used to elimi­nate troublesome ground loop and noise problems.
It can also be used to replace relays and transform­ers in many digital interface applications, as well as
analog applications such as CRT modulation.

Maximum Ratings
Emitter (each channel)

Rated Forward Current, DC...........................60 mA

Peak Forward Current, DC

(1 µ

s pulse, 300 pps)......................................3 A

Power Dissipation at 25 °
Derate Linearly from 25 °

C Ambient...........100 mW

C......................1.3 mW/ ° C

Detector (each channel)

Collector Current...........................................30 mA

Collector-Emitter Breakdown Voltage...............30 V

Power Dissipation at 25 °
Derate Linearly from 25 °

C Ambient...........150 mW

C.........................2 mW/ ° C

Package

Isolation Test V oltage.........................5300 VAC

Isolation Resistance

V

=500 V, T

IO

V

=500 V, T

IO

=25 ° C ............................... ≥ 10

A

=100 ° C ............................. ≥ 10

A

RMS

12
11

Ω

Ω

Creepage...............................................7 mm min.

Clearance...............................................7 mm min.

Total Package Dissipation

at 25 °

C Ambient. ...................................400 mW

Derate Linearly from 25 °

Storage Temperature ...................–55 °

Operating Temperature ...............–55 °

Lead Soldering Time at 260 °

C....................5.33 mW/ ° C

C to +150 ° C
C to +100 ° C

C................... 10 sec.

4° Typ.

.022 (.56)
.018 (.46)

.100 (2.54) Typ.

Electrical Characteristics (T

Sym­bol

Emitter

Forward Voltage V
Reverse Current I
Junction

Capacitance

Detector

Breakdown Voltage,
Collector-Emitter
Emitter-Collector

Leakage Current,
Collector -Emitter

Capacitance
Collector-Emitter C

Package

DC Current
Transfer Ratio

Saturation Voltage,
Collector-Emitter

Isolation
Capacitance

Capacitance
between Channels 0.4 pF f=1.0 MHz

Bandwidth 150 KHz I

F

R

C

J

BV
BV

I

CEO

CE

CTR 20 50 % I

V

CEsat

C

ISOL

Switching Times,
Output Transistor

t

on

Pin One I.D.

12

87

.150 (3.81)
.130 (3.30)

Anode
Cathode
Cathode

Anode

1
2

3
4

.305 Typ.

(7.75) Typ.

10° Typ.

.040 (1.02)
.030 (.76 )

3°–9°
.012 (.30)

.008 (.20)

=25 ° C)

A

Min. Typ. Max. Unit Condition

1.25 1.50 V I

CEO
ECO

, t

0.1 10
25 pF V

30

7.0

off

65
10

1.0 100 nA V

8.0 pF V

0.40 V I

0.5 pF f=1.0 MHz

3.0

µ AV

V
V

µ sI

8

Emitter

7

Collecto
Collecto

6

Emitter

5

.135 (3.43
.115 (2.92

=20 mA

F

=3.0 V

R

=0 V

F

I

=10 µ A

C

I

=10 µ A

E

CE

CE

=10 mA,

F

V

CE

=2.0 mA,

C

I

=16 mA

F

=2.0 mA,

C

V

CC

R

= 100 Ω

L

=2 mA,

C

R

=100 Ω ,

E

V

CE

=10 V

=0 V

=10 V

=10 V,

=10 V

5–1

V

C

V

V

Figure 1. Forward voltage versus forward current

1.4

1.3

Ta = -55°C

1.2

1.1

Ta = 25°C

1.0

0.9

Ta = 85°C

0.8

VF - Forward Voltage - V

0.7

IF - Forward Current - mA

Figure 2. Normalized non-saturated and
saturatedCTR at Ta=25 ° C versus LED current

1.5
Normalized to:

Vce = 10V, IF = 10mA
Ta = 25°C

1.0

CTRce(sat) Vce = 0.4

0.5

NCTR(SAT)

NCTR - Normalized CTR

0.0

IF - LED Current - mA

NCTR

100101.1

Figure 5. Normalized non-saturated and
saturated CTR at Ta=85 ° C versus LED current

1.5
Normalized to:

Vce = 10V, IF = 10mA, Ta = 25°C

CTRce(sat) Vce = 0.4V

1.0

0.5

NCTR - Normalized CTR

100101.1

0.0

IF - LED Current - mA

Ta = 85°C

NCTR(SAT)
NCTR

100101.1

Figure 6. Collector-emitter current versus
temperature and LED current

35
30

25
20

15
10

5
0

Ice - Collector Current - mA

50°C

25°C

85°C

IF - LED Current - mA

70°C

6050403020100

Figure 3. Normalized non-saturated and
saturated CTR at Ta=50 ° C versus LED current

1.5
Normalized to:

Vce = 10V, IF = 10mA, Ta = 25°

CTRce(sat) Vce = 0.4

1.0

Ta = 50°C

0.5

NCTR(SAT)

NCTR - Normalized CTR

0.0

IF - LED Current - mA

NCTR

Figure 4. Normalized non-saturated and
saturated CTR at Ta=70 ° C versus LED current

1.5

Normalized to:

Vce = 10V, IF = 10mA
Ta = 25°C

1.0
CTRce(sat) Vce = 0.4

0.5

NCTR - Normalized CTR

0.0

IF - LED Current - mA

Ta = 70°C

NCTR(SAT)
NCTR

Figure 7. Collector-emitter leakage current
versus temperature

5

10

4

10

3

10

2

10

1

10

0

10

-1

10

Iceo - Collector-Emitter - nA

-2

100101.1

10

Ta - Ambient Temperature - °C

Vce = 10V

TYPICAL

100806040200-20

Figure 8. Propagation delay versus collector
load resistor

s

1000

Ta = 25°C, IF = 10mA
Vcc = 5 V , Vth = 1.5 V

tpHL

100

10

tpLH

tpLH - Propagation Delay - µ

100101.1

1

100101.1

RL - Col lector Load Resisto r - KΩ

2.5

2.0

1.5

1.0

s

tpHL - Propagation Del ay - µ

5–2

ILCT6