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IL66B
PHOTODARLINGTON
OPTOCOUPLER
FEATURES
• Internal RBE for High Stability
• High Current Transfer Ratio
at I
=2 mA, VCE=5 V
F
IL66B-1, 200% min.
IL66B-2, 750% min.
• Withstand Test Voltage, 5300 VAC
RMS
• No Base Connection
• High Isolation Resistance
• Standard Plastic DIP Package
• Underwriters Lab Approval #E52744
V
• VDE 0884 Available with Option 1
DE
DESCRIPTION
The IL66B is an optically coupled isolator employing a Gallium Arsenide infrared emitter and a silicon
photodarlington detector. Switching can be accomplished while maintaining a high degree of isolation
between driving and load circuits. They can be
used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic fields.
Maximum Ratings
(at 25°C)
Emitter
Peak Reverse Voltage........................................6 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25
Derate Linearly from 55
°
C..........................100 mW
°
C....................1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage.............. 60 V
Emitter-Collector Breakdown Voltage................ 5 V
Power Dissipation at 25
Derate Linearly from 25
°
C Ambient...........200 mW
°
C......................2.6 mW/°C
Package
Isolation Test V oltage (t=1 sec.)........5300 VAC
RMS
Isolation Resistance
V
=500 V, TA=25°C ...............................≥1012
IO
VIO=500 V, TA=100°C .............................≥1011
Ω
Ω
Total Dissipation at 25°C............................250 mW
Derate Linearly from 25
°
C......................3.3 mW/°C
Creepage Path........................................7 min mm
Clearance Path........................................ 7 min mm
Storage Temperature....................–55
Operating Temperature................–55
Lead Soldering Time at 260
°
C....................10 sec.
°
C to +150°C
°
C to +100°C
Dimensions in inches (mm)
3
248 (6.30)
256 (6.50)
4
5
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
Electrical Characteristics
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V
Reverse Current I
Capacitance C
Detector
Breakdown Voltage
Collector-Emitter
Leakage Current
Collector-Emitter
Package
Current Transfer Ratio
IL66B-1
IL66B-2
Saturation Voltage
Collector-Emitter
Turn-On,Turn-Off
Time
F
R
O
BV
I
CEO
CTR
V
CEsat
ton,t
12
pin one
ID.
6
.130 (3.30)
.138 (3.50)
.031 (0.80)
min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
(TA=25°C)
CEO
off
Anode
Cathode
NC
1
2
3
.300 (7.62)
18° typ.
.010 (.25) typ.
.300 (7.62)
.347 (8.82)
typ.
6
NC
5
Collector
4
Emitter
.114 (2.90
.130 (3.30
1.25 1.5 V IF=10 mA
0.01 100
µ
AVR=3.0 V
25 pF VR=0 V
60 V IC=100 µA,
IF=0
1.0 100 nA VCE=50 V,
IF=0
IF=2 mA,
VCE=5 V
200
750 1000
%
%
1.0 V IC=10 mA,
IF=10 mA
200
µ
sVCC=10 V
IF=2 mA,
RL=100
Ω
5–1
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Figure 1. Forward voltage versus forward current
1.4
1.3
1.2
1.1
1.0
0.9
0.8
VF - Forward Voltage - V
0.7
IF - Forward Current - mA
Ta = -55°C
Ta = 25°C
Ta = 85°C
100101.1
Figure 5. High/low propagation delay versus
collector load resistance and LED current
50
40
10KΩ
30
220Ω
20
Delay - µs
10
0
tpHL - High/Low Propagation
0 5 10 15 20
IF - LED Current - mA
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
Figure 2. Normalized non-saturated and saturated
CTRce versus LED current
2.0
Normalized to:
1.5
1.0
0.5
0.0
NCTRce - Normalized CTRce
Ta = 25°
Vce = 5 V
IF = 2 mA
IF - LED Current - mA
101.1
Vce = 5 V
Vce = 1 V
100
Figure 3. Normalized non-saturated and saturated
CTRce versus LED current
1.2
Normalized to:
Ta = 25°C
1.0
Vce = 5 V
0.8
IF = 10 m
0.6
0.4
0.2
0.0
NCTRce - Normalized CTRce
.1 1 10 100 1000
IF - LED Current - mA
Vce = 5 V
Vce = .4 V
Figure 6. Low/high propagation delay versus
collector load resistance and LED current
15
12
10
75
Ta = 25°C
Delay - µs
Vcc = 5 V
50
Vth = 1.5
25
0
tpLH - Low/High Propagation
0 5 10 15 20
IF - LED Current - mA
10KΩ
2KΩ
220Ω
Figure 4. Non-saturated and saturated collector
emitter current versus LED current
10000
1000
100
10
1
.1
current - mA
.01
Ice - Collector-emitter
.001
.1 1 10 100
IF - LED Current - mA
Vce = 5
Vce = .4 V
IL66B
5–2