Siemens IL5, IL2 Datasheet
)
)
.2
.2
IL1/2/5
PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Current Transfer Ratio at I
=10 mA
F
IL1, 20% Min.
IL2, 100% Min.
IL5, 50% Min.
• High Collector-Emitter Voltage
IL1 – BV
IL2, IL5 – BV
CEO
=50 V
CEO
=70 V
• Field-Effect Stable by TRansparent IOn Shield
(TRIOS)
• Double Molded Package Offers Isolation Test
Voltage 5300 VAC
RMS
• Underwriters Lab File #E52744
V
DE
• VDE Approval #0884
(Available with Option 1)
DESCRIPTION
The IL1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor .
Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of
electrical isolation between input and output. The IL1/2/5
are especially designed for driving medium-speed logic
and can be used to eliminate troublesome ground loop
and noise problems. These couplers can be used also
to replace relays and transformers in many digital interface applications such as CRT modulation.
See Appnote 45, “How to Use Optocoupler Normalized
Curves.”
Dimensions in inches (mm)
Pin One ID
3
48 (6.30)
56 (6.50)
4
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
12
5
6
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
Anode
Cathode
NC
1
2
3
.300 (7.62)
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
typ.
6
Base
5
Collector
4
Emitter
.110 (2.79
.150 (3.81
Maximum Ratings
Emitter
Reverse Voltage.................................................................................. 6 V
Forward Current ............................................................................. 60 mA
Surge Current .................................................................................. 2.5 A
Power Dissipation........................................................................100 mW
Derate Linearly from 25
°
C .................................................... 1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage
IL1................................................................................................... 50 V
IL2, IL5............................................................................................. 70 V
Emitter-Base Reverse Voltage.............................................................7 V
Collector-Base Reverse Voltage........................................................ 70 V
Collector Current ............................................................................50 mA
Collector Current (t<1 ms)............................................................400 mA
Power Dissipation........................................................................ 200 mW
Derate Linearly from 25
°
C ...................................................... 2.6 mW/°C
Package
Package Power Dissipation........................................................ 250 mW
Derate Linearly from 25
°
C ...................................................... 3.3 mW/°C
Isolation Test V oltage (between emitter and detector
referred to standard climate 23
°
C/50%RH, DIN 50014)5300 VA C
RMS
Creepage..................................................................................min. 7 mm
Clearance .................................................................................min. 7 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1.........................................................175
Isolation Resistance
V
=500 V, TA=25°C
IO
VIO=500 V, TA=100°C
.........................................................................≥
.......................................................................≥
1012
1011
Ω
Ω
Storage Temperature .................................................... –40°C to +150°C
Operating Temperature................................................. –40
Junction Temperature..................................................................... 100
Soldering Temperature (2 mm from case bottom).......................... 260
°
C to +100°C
°
C
°
C
5–1
This document was created with FrameMaker 4.0.4
Characteristics
Symbol Min Typ Max Unit Condition
Emitter
Forward Voltage V
Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance Junction to Lead R
F
BR
R
O
THJL
630 VI
Detector
Capacitance C
Collector-Emitter Leakage Current I
Collector-Emitter Saturation Voltage V
Base-Emitter Voltage V
C
C
CEO
CESAT
BE
CE
CB
EB
DC Forward Current Gain HFE 200 650 1800 VCE=10 V, IB=20 µA
Saturated DC Forward Current Gain HFE
Thermal Resistance Junction to Lead R
THJL
SAT
120 400 600 VCE=0.4 V, IB=20 µA
Package T ransfer Characteristics
IL1
Saturated Current Transfer Ratio
(Collector-Emitter) CTR
CESAT
Current Transfer Ratio
(Collector-Emitter) CTR
CE
20 80 300 % IF=10 mA, VCE=10 V
Current Transfer Ratio
(Collector-Base) CTR
CB
IL2
Saturated Current Transfer Ratio
(Collector-Emitter) CTR
CESAT
Current Transfer Ratio
(Collector-Emitter) CTR
Current Transfer Ratio CTR
CE
CB
100 200 500 % IF=10 mA, VCE=10 V
IL5
Saturated Current Transfer Ratio
(Collector-Emitter) CTR
CESAT
Current Transfer Ratio
(Collector-Emitter) CTR
Current Transfer Ratio CTR
CE
CB
50 130 400 % IF=10 mA, VCE=10 V
Isolation and Insulation
Common Mode Rejection Output High CMH 5000 V/µsVCM=50 V
Common Mode Rejection Output Low CML 5000 V/µsVCM=50 V
Common Mode Coupling Capacitance C
Package Capacitance C
Insulation Resistance R
CM
I-O
S
1.25 1.65 V IF=60 mA
=10 µA
R
0.01 10
µ
AV
=6 V
R
40 pF VR=0 V, f=1 MHz
750
6.8
8.5
11
550nAV
°
C/W
pF
pF
pF
VCE=5 V, f=1 MHz
VCB=5 V, f=1 MHz
VEB=5 V, f=1 MHz
=10 V
CE
0.25 ICE=1 mA, IB=20 µA
0.65 V VCE=10 V, IB=20 µA
500
°
C/W
75 % IF=10 mA, VCE=0.4 V
0.25 % IF=10 mA, VCB=9.3 V
170 % IF=10 mA, VCE=0.4 V
0.25 % IF=10 mA, VCB=9.3 V
100 % IF=10 mA, VCE=0.4 V
0.25 % IF=10 mA, VCB=9.3 V
, RL=1 kΩ, IF=0 mA
P-P
, RL=1 kΩ, IF=10
mA
P-P
0.01 pF
0.6 pF V
10
+14
Ω
=0 V, f=1 MHz
I-O
V
=500 V
I-O
5–2
IL1/2/5
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