Siemens IL4216 Datasheet
9)
1)
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1
te
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600 V
700 V
800 V
IL4216
IL4217
IL4218
TRIAC DRIVER OPTOCOUPLER
FEATURES
• High Input Sensitivity I
• 600/700/800 V Blocklng Voltage
• 300 mA On-State Current
• High Static dv/dt 10,000 V/ µ sec., typical
• Inverse Parallel SCRs Provide Commutating
dv/dt >10 KV/ µ sec
• Very Low Leakage <10 µ A
• Isolation Test Voltage from Double Molded
Package 5300 VAC
• Package, 6-Pln DIP
• Underwriters Lab File #E52744
DESCRIPTION
The IL421x consists of an AlGaAs IRLED optically
coupled to a pair of photosensitive non-zero crossing
SCR chips and are connected inversely parallel to
form a TRIAC. These three semiconductors are
assembled in a six pin 0.3 inch dual in-line package,
using high insulation double molded, over/under leadframe construction.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than
1.3 mA (DC).
The IL421x uses two discrete SCRs resulting in a
commutating dv/dt of greater than 10KV/ µ
of a proprietary
greater than 10KV/ µ
FET that is enhanced when high dv/dt spikes occur
between MT1 and MT2 of the TRIAC. The FET clamps
the base of the phototransistor when conducting, disabling the internal SCR predriver.
The blocking voltage of up to 800 V permits control of
off-line voltages up to 240 VAC, with a safety factor of
more than two, and is sufficient for as much as 380
V AC. Current handling capability is up to 300 mA
RMS, continuous at 25 °
The IL421x isolates low-voltage logic from 120, 240,
and 380 VAC lines to control resistive inductive, or
capacitive loads including motors solenoids, high current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial controls, office equipment, and consumer appliances.
dv/dt clamp results in a static dv/dt of
s. This clamp circuit has a MOS-
RMS
C.
=1.3 mA
FT
s. The use
Dimensions in inches (mm)
Pin One ID.
3
248 (6.30)
256 (6.50)
4
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
Maximum Ratings
Emitter
Reverse Voltage...................................................................................6 V
Forward Current ..............................................................................60 mA
Surge Current....................................................................................2.5 A
Power Dissipation.........................................................................100 mW
Derate Linearly from 25 °
Thermal Resistance....................................................................750 °
Detector
Peak Off-State Voltage
IL4216...........................................................................................600 V
IL4217...........................................................................................700 V
IL4218...........................................................................................800 V
RMS On-State Current...................................................................300 mA
Single Cycle Surge...............................................................................3 A
Total Power Dissipation................................................................500 mW
Derate Linearly from 25 °
Thermal Resistance.....................................................................150 °
Package
Isolation Test Voltage...........................................................5300 VAC
Storage Temperature......................................................–55 ° C to +150 ° C
Operating Temperature..................................................–55 °
Lead Soldering Temperature................................................260 °
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
12
5
6
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
C......................................................1.33 mW/ ° C
C........................................................6.6 mW/ ° C
=25 ° C ................................................................. ≥ 10
A
=100 ° C ............................................................... ≥ 10
A
LED
Anode
LED
Cathode
NC
1
2
3
.300 (7.62)
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
6
5
4
typ.
.110 (2.7
.150 (3.8
C to +100 ° C
Triac
Anode 2
Substra
do not
connec
Triac
Anode
C/W
C/W
RMS
C/5 sec.
12
Ω
11
Ω
5–1
Characteristics
(T
A
=25 ° C)
Parameter Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V
Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance, Junction to Lead R
F
BR
R
O
THJL
630 VI
1.3 1.5 V I
0.1 10
µ AV
40 pF V
750
°
C/W
=20 mA
F
=10 mA
R
=6 V
R
=o V, f=1 MHz
F
Output Detector
Repetitive Peak Off-State Voltage
IL4216
IL4217
IL4218
V
V
V
DRM
DRM
DRM
600
700
800
650
750
850
V
V
V
I
DRM
I
DRM
I
DRM
=100 µ A
=100 µ A
=100 µ A
Off-State Voltage
IL4216
IL4217
IL4218
Off-State Current I
Reverse Current I
On-State Voltage V
On-State Current I
Surge (Non-Repetitive) On-State Current I
Holding Current I
Latching Current I
LED Trigger Current I
Turn-On Time t
Turn-Off Time t
Critical State of Rise: Off-State Voltage dv
Commutating Voltage dv
Off-State Current di/dt 100 A/ms I
Thermal Resistance, Junction to Lead R
V
D(RMS)
V
D(RMS)
V
D(RMS)
D(RMS)
R(RMS)
TM
TM
TSM
H
L
FT
ON
OFF
(MT)
(COM)
THJL
424
484
565
460
536
613
10 100
10 100
1.7 3 V I
65 200
5mAV
0.7 1.3 mA V
35
50
/dt 10,000 2000 V /µ s
/dt 10,000
2000
150
V
V
V
µ AV
µ AV
I
D(RMS)
I
D(RMS)
I
D(RMS)
=600 V, T
D
=600 V, T
R
=300 mA
T
300 mA PF=1.0, V
3 A f=50 Hz
µ AV
µ sV
=3 V
T
=2.2 V
T
=5 V
AK
=V
RM
µ s PF=1.0, I
V
, V
RM
V /µ
V /µ s
V /µ s
C/W
°
s
, V
V
RM
V
, V
RM
V
, V
RM
=300 mA
T
Package
Critical Rate of Rise of Coupled Input-Output Voltage dv
/dt 5000 V/µsIT=0 A, VRM=VDM=300 VAC
(IO)
Common Mode Coupling Capacitor
Package Capacitance C
C
CM
IO
0.01 pF
0.8 pF f=1 MHz, VIO=0 V
=70 µ A
=70 µ A
=70 µ A
A
A
T(RMS)
=424 VAC
DM
=300 mA
T
=400 VAC, T
DM
=400 VAC, T
DM
=400 VAC, T
DM
=400 VAC, T
DM
=100
=100
°
C
C
°
=1.7 V
=25
C
°
A
=25
C
°
A
°
=25
C
A
°
=25
C
A
Figure 1. LED forward current vs. forward voltage
Figure 2. Forward voltage versus forward current
IL4216/4217/4218
5–2
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