Siemens IL4208 Datasheet

IL4208

800 V TRIAC DRIVER OPTOCOUPLER

FEATURES

• High Input Sensitivity, I

=2 mA

FT

• Blocking V oltage, 800 V

• Isolation T est V oltage 5300 VAC

RMS

• 300 mA On-state Current

• High Static dv/dt 10,000 V/Ms

• Inverse Parallel SCRs Provide

• Commutating dv/dt >2K V/ µ s

• Very Low Leakage <10 µ A

• Small 6-Pin DIP Package

• Underwriters Lab File #E52744

• VDE 0884 Available with Option 1
Maximum Ratings

Emitter

Reverse Voltage .....................................................6 V

Forward Current ................................................60 mA

Surge Current.......................................................2.5 A

Thermal Resistance.......................................750 °

Derate from 25 °

C ......................................1.33 mW/ ° C

C/W

Detector

Peak Off-state Voltage.........................................800 V

Peak Reverse Voltage.........................................800 V

RMS On-state Current .....................................300 mA

Single Cycle Surge..................................................3 A

Thermal Resistance.......................................125 °

C/W

Total Power Dissipation...................................500 mW

Derate from 25 °

C ........................................6.6 mW/ ° C

Package

Isolation Test Voltage (between emitter

and detector, climate per DIN 40046,

part 2, Nov. 74 (t=1 min.)....................5300 VAC

RMS

Pollution Degree (DIN VDE 0109).............................. 2

Creepage Distance........................................... ≥

Clearance.......................................................... ≥

7 mm
7 mm

Comparative Tracking Index per DIN IEC

112/VDE 0303 part 1, Group IIIa per

DIN VDE 6110..................................................... 175

Isolation Resistance

V

=500 V, T

IO

V

=500 V, T

IO

=25 ° C .................................... ≥ 10

A

=100 ° C .................................. ≥ 10

A

12

11

Ω

Ω

Storage Temperature Range.............–55 ° C to +125 ° C

Ambient Temperature Range............–55 °

Soldering Temperature (max. ≤

soldering ≥

0.5 mm from case bottom)............260 ° C

10 sec.dip

C to +100 ° C

Package Dimensions in inches (mm)

Pin One ID.

12

5

6

.130 (3.30)
.150 (3.81)

.020 (.051) min.

.031 (0.80)
.035 (0.90)

.100 (2.54) typ.

LED

Anode

LED

Cathode

NC

1

2

3

.300 (7.62)

18° typ.

.010 (.25)
.014 (.35)

.300 (7.62)
.347 (8.82)

typ.

Triac

6

MT2
Substrate

5

do not
connect

Triac

4

MT1

.110 (2.79)
.150 (3.81)

.248 (6.30)
.256 (6.50)

.039

(1.00)

min.

4°

typ.

.018 (0.45)
.022 (0.55)

3

4

.335 (8.50)
.343 (8.70)

DESCRIPTION

The IL4208 consists of a GaAs IRLED optically coupled to a photosensi­tive non-zero crossing TRIAC network. The TRIAC consists of two
inverse parallel connected monolithic SCRs. These three semiconduc­tors are assembled in a six pin 0.3 inch dual in-line package, using high
insulation double molded, over/under leadframe construction.

High input sensitivity is achieved by using an emitter follower pho­totransistor and a cascaded SCR predriver resulting in an LED trigger
current of less than 2 mA (DC).

The IL4208 uses two discrete SCRs resulting in a commutating dV/dt
greater than 10 KV/ µ
static dV/dt of greater than 10KV/ µ

s. The use of a proprietary dv/dt clamp results in a

s. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between MT1 and MT2
of the TRIAC. When conducting, the FET clamps the base of the pho­totransistor, disabling the first stage SCR predriver.

The 800V blocking voltage permits control of off-line voltages up to
240VAC, with a safety factor of more than two, and is sufficient for as
much as 380VAC.

The IL4208 isolates low-voltage logic from 120, 240, and 380 VAC lines
to control resistive, inductive, or capacitive loads including motors, sole­noids, high current thyristors or TRIAC and relays.

Applications include solid-state relays, industrial controls, office equip­ment, and consumer appliances.

5–146

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Condition
Emitter

Forward Voltage V
Reverse Current I
Capacitance C
Thermal Resistance, Junction to Lead R

F

R

0
THJL

1.16 1.35 V I

0.1 10 µ AV
40 pF V
750

° C/W

=10 mA

F

=6 V

R

=0 V, f=1 MHz

F

Output Detector

Repetitive Peak Off-state Voltage V
Repetitive Peak Reverse Voltage V
Off-state Voltage V
Reverse Voltage V
Off-state Current I
Reverse Current I
On-state Voltage V
On-state Current I
Surge (Non-repetitive On-state Current) I
Holding Current I
Latching Current I
LED Trigger Current I
Turn-on Time

Turn-off Time

DRM
RRM
D(RMS)

R
D(RMS)
R(RMS)

TM
TM
TSM
H
L
FT

t

ON

t

OFF

Critical Rate of Rise of Off-State Voltage dv/dt

dv/dt

Critical Rate of Rise of Voltage at Current
Commutation

dv/dt

dv/dt
Critical Rate of Rise of On-state Current di/dt/
Thermal Resistance, Junction to Lead R

THJL

cr
cr

crq
crq

cr

800 V I
800 V I
565 V I
565 V I

10 100 µ AV
10 100 µ AV

1.7 3 V I
300 mA PF=1.0, V
3 A f=50 Hz

65 500 µ A
5mAV
1 2 mA V
35

50

10000
5000

µ s
µ s

V/ µ
V/ µ ss

V/

µ sV

10000
5000

8A/

150

µ

s

° C/W

=100 µ A

DRM

=100 µ A

RM
D(RMS)
R(RMS)

=800 V, T

D

=800 V, T

R

=300 mA

T

=2.2 V

T

=5 V

AK

=V

V

RM

PF=1.0, I

=0.67 V

V

D

V

=0.67 V

D

=0.67 V

D

di/dt

crq

T

=25 ° C

j

T

=80 ° C

j

Package

Critical Rate of Rise of Coupled Input/Output Volt­age

Common Mode Coupling Capacitor C
Package Capacitance C
Trigger Current Temperature Gradient

dv

/dt 5000 V/ µ sI

(IO)

CM
IO

∆I

/∆T

FT

j

0.01 pF

0.8 pF f=1 MHz, VIO=0 V

714µA/K

=0 A, V

T

=70 µ A
=70 µ A

A
A

T(RMS)

=565 VAC,

DM

=300 mA

T

DRM
DRM

DRM

<15 A/ms

=V

RM

100 ° C
=100 ° C

=1.7 V

, T

=25 ° C

j

, T

=80 ° C

j

,

=565 VAC

DM

5–147

IL4208