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IL4208
800 V TRIAC DRIVER OPTOCOUPLER
FEATURES
• High Input Sensitivity, I
=2 mA
FT
• Blocking V oltage, 800 V
• Isolation T est V oltage 5300 VAC
RMS
• 300 mA On-state Current
• High Static dv/dt 10,000 V/Ms
• Inverse Parallel SCRs Provide
• Commutating dv/dt >2K V/ µ s
• Very Low Leakage <10 µ A
• Small 6-Pin DIP Package
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings
Emitter
Reverse Voltage .....................................................6 V
Forward Current ................................................60 mA
Surge Current.......................................................2.5 A
Thermal Resistance.......................................750 °
Derate from 25 °
C ......................................1.33 mW/ ° C
C/W
Detector
Peak Off-state Voltage.........................................800 V
Peak Reverse Voltage.........................................800 V
RMS On-state Current .....................................300 mA
Single Cycle Surge..................................................3 A
Thermal Resistance.......................................125 °
C/W
Total Power Dissipation...................................500 mW
Derate from 25 °
C ........................................6.6 mW/ ° C
Package
Isolation Test Voltage (between emitter
and detector, climate per DIN 40046,
part 2, Nov. 74 (t=1 min.)....................5300 VAC
RMS
Pollution Degree (DIN VDE 0109).............................. 2
Creepage Distance........................................... ≥
Clearance.......................................................... ≥
7 mm
7 mm
Comparative Tracking Index per DIN IEC
112/VDE 0303 part 1, Group IIIa per
DIN VDE 6110..................................................... 175
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
=25 ° C .................................... ≥ 10
A
=100 ° C .................................. ≥ 10
A
12
11
Ω
Ω
Storage Temperature Range.............–55 ° C to +125 ° C
Ambient Temperature Range............–55 °
Soldering Temperature (max. ≤
soldering ≥
0.5 mm from case bottom)............260 ° C
10 sec.dip
C to +100 ° C
Package Dimensions in inches (mm)
Pin One ID.
12
5
6
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
LED
Anode
LED
Cathode
NC
1
2
3
.300 (7.62)
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
typ.
Triac
6
MT2
Substrate
5
do not
connect
Triac
4
MT1
.110 (2.79)
.150 (3.81)
.248 (6.30)
.256 (6.50)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
3
4
.335 (8.50)
.343 (8.70)
DESCRIPTION
The IL4208 consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC network. The TRIAC consists of two
inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high
insulation double molded, over/under leadframe construction.
High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger
current of less than 2 mA (DC).
The IL4208 uses two discrete SCRs resulting in a commutating dV/dt
greater than 10 KV/ µ
static dV/dt of greater than 10KV/ µ
s. The use of a proprietary dv/dt clamp results in a
s. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between MT1 and MT2
of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver.
The 800V blocking voltage permits control of off-line voltages up to
240VAC, with a safety factor of more than two, and is sufficient for as
much as 380VAC.
The IL4208 isolates low-voltage logic from 120, 240, and 380 VAC lines
to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial controls, office equipment, and consumer appliances.
5–146
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Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V
Reverse Current I
Capacitance C
Thermal Resistance, Junction to Lead R
F
R
0
THJL
1.16 1.35 V I
0.1 10 µ AV
40 pF V
750
° C/W
=10 mA
F
=6 V
R
=0 V, f=1 MHz
F
Output Detector
Repetitive Peak Off-state Voltage V
Repetitive Peak Reverse Voltage V
Off-state Voltage V
Reverse Voltage V
Off-state Current I
Reverse Current I
On-state Voltage V
On-state Current I
Surge (Non-repetitive On-state Current) I
Holding Current I
Latching Current I
LED Trigger Current I
Turn-on Time
Turn-off Time
DRM
RRM
D(RMS)
R
D(RMS)
R(RMS)
TM
TM
TSM
H
L
FT
t
ON
t
OFF
Critical Rate of Rise of Off-State Voltage dv/dt
dv/dt
Critical Rate of Rise of Voltage at Current
Commutation
dv/dt
dv/dt
Critical Rate of Rise of On-state Current di/dt/
Thermal Resistance, Junction to Lead R
THJL
cr
cr
crq
crq
cr
800 V I
800 V I
565 V I
565 V I
10 100 µ AV
10 100 µ AV
1.7 3 V I
300 mA PF=1.0, V
3 A f=50 Hz
65 500 µ A
5mAV
1 2 mA V
35
50
10000
5000
µ s
µ s
V/ µ
V/ µ ss
V/
µ sV
10000
5000
8A/
150
µ
s
° C/W
=100 µ A
DRM
=100 µ A
RM
D(RMS)
R(RMS)
=800 V, T
D
=800 V, T
R
=300 mA
T
=2.2 V
T
=5 V
AK
=V
V
RM
PF=1.0, I
=0.67 V
V
D
V
=0.67 V
D
=0.67 V
D
di/dt
crq
T
=25 ° C
j
T
=80 ° C
j
Package
Critical Rate of Rise of Coupled Input/Output Voltage
Common Mode Coupling Capacitor C
Package Capacitance C
Trigger Current Temperature Gradient
dv
/dt 5000 V/ µ sI
(IO)
CM
IO
∆I
/∆T
FT
j
0.01 pF
0.8 pF f=1 MHz, VIO=0 V
714µA/K
=0 A, V
T
=70 µ A
=70 µ A
A
A
T(RMS)
=565 VAC,
DM
=300 mA
T
DRM
DRM
DRM
<15 A/ms
=V
RM
100 ° C
=100 ° C
=1.7 V
, T
=25 ° C
j
, T
=80 ° C
j
,
=565 VAC
DM
5–147
IL4208