Siemens IL4118, IL4116 Datasheet

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. .
e
600 V 700 V 800 V
IL4116 IL4117 IL4118
ZERO V OL T A GE CR OSSING
FEATURES
• High Input Sensltlvity: I I
=3.5 mA, Typlcal PF < 1.0
FT
• Zero V oltage Crosslng
• 600/700/800 V Blocklng V oltage
• 300 mA On-State Current
• High Statlc dv/dt 10,000 V/ µ sec., typical
• Inverse Parallel SCRs Provide Commutatlng dv/dt >10 KV/msec.
• Very Low Leakage <10 mA
• Isolation Test Voltage from Double Molded Package 5300 VACRMS
• Package, 6-Pln DIP
• Underwriters Lab File #E52744
DESCRIPTION
The IL411x consists of an AlGaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semicon­ductors are assembled in a six pin 0.3 inch dual in­line package, using high insulation double molded, over/under leadframe construction. High input sensitivity is achieved by using an emit­ter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 1.3 mA(DC). The IL411x uses two discrete SCRs resulting in a commutating dV/dt greater than 10 KV/ms The use of a proprietary dv/dt clamp results in a static dv/dt of greater than 10 KV /µ MOSFET that is enhanced when high dv/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the pho­totransistor, disabling the first stage SCR predriver. The zero cross line voltage detection circuit con­sists of two enhancement MOSFETS and a photo­diode. The inhibit voltage of the network is determined by the enhancement voltage of the N­channel FET. The P-channel FET is enabled by a photocurrent source that permits the FET to con­duct the main voltage to gate on the N-channel FET . Once the main voltage can enable the N-channel, it clamps the base of the phototransistor, disabling the first stage SCR predriver. The blocking voltage of up to 800 V permits control of off-line voltages up to 240 VAC, with a safety fac­tor of more than two, and is sufficient for as much as 380 VAC. Current handling capability is up to 300 mA RMS continuous at 25 ° The IL411x isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. Applications include solid-state relays, industrial controls, office equipment, and consumer appli­ances.
FT
s. This clamp circuit has a
C.
Dimensions in inches (mm)
248 (6.30) 256 (6.50)
.039
(1.00)
Min.
4°
Typ.
.018 (0.45) .022 (0.55)
Maximum Ratings Emitter
Reverse Voltage ...................................................................................6 V
Forward Current.............................................................................. 60 mA
Surge Current...................................................................................2.5 A
Power Dissipation.........................................................................100 mW
Derate Linearly from 25 °
Thermal Resistance................................................................... 750 °
Detector
Peak Off-State Voltage
IL4116...........................................................................................600 V
IL4117...........................................................................................700 V
IL4118...........................................................................................800 V
RMS On-State Current.................................................................. 300 mA
Single Cycle Surge.............................................................................. 3 A
Total Power Dissipation ................................................................500 mW
Derate Linearly from 25 °
Thermal Resistance.................................................................... 150 °
Package
Storage Temperature..................................................... –55 ° C to +150 ° C
Operating Temperature................................................. –55 °
Lead Soldering Temperature................................................260 °
Isolation Test Voltage...........................................................5300 VAC
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
5–1
TRIAC DRIVER OPTOCOUPLER
Pin One ID.
3
4
.335 (8.50) .343 (8.70)
12
5
6
.130 (3.30) .150 (3.81)
.020 (.051) Min.
.031 (0.80) .035 (0.90)
.100 (2.54) Typ.
C..................................................... 1.33 mW/ ° C
C....................................................... 6.6 mW/ ° C
=25 ° C.................................................................. ≥ 10
A
=100 ° C................................................................ ≥ 10
A
LED
Anode
LED
Cathode
NC
1
2
3
ZCC*
*Zero Crossing Circuit
.300 (7.62)
Typ.
18° Typ.
.010 (.25) .014 (.35)
.300 (7.62) .347 (8.82)
6
5
4
C to +100 ° C
Triac Anode 2
Substrat do not connect
Triac Anode 1
.110 (2.79 .150 (3.81
C/5 sec.
C/W
C/W
RMS
12
11
Characteristics
(T
A
=25 ° C)
Parameter Symbol Min. Typ. Max. Unit Condition Emitter
Forward Voltage V Breakdown Voltage V Reverse Current I Capacitance C Thermal Resistance, Junction to Lead R
F BR
R
O
THJL
630 VI
1.3 1.5 V I
0.1 10
µ AV
40 pF V 750
°
C/W
-20 mA
F
=10 µ A
R
=6 V
R
=0 V, f=1 MHz
F
Output Detector
Repetitive Peak Off-State Voltage IL4116 IL4117 IL4118
V V V
DRM DRM DRM
600 700 800
650 750 850
V V V
I
DRM
I
DRM
I
DRM
Off-State Voltage IL4116 IL4117 IL4118
Off-State Current I On-State Voltage V On-State Current I Surge (Non-Repetitive, On-State Current) I Holding Current I Latchiing Current I LED Trigger Current I Zero Cross Inhibit Voltage V Turn-On Time t Turn-Off Time t Critical State of Rise: Off-State Voltage dv
Commutating Voltage dv
Commutating Current di/dt 100 A/ms I Thermal Resistance, Junction to Lead R
V
D(RMS)
V
D(RMS)
V
D(RMS)
D(RMS)
TM
TM
TSM H L FT
IH ON OFF
/dt 10,000
(MT)
(COM)
THJL
424 494 565
/dt 10,000
460 536 613
10 100
1.7 3 V I
V V V
µ AV
I
D(RMS)
I
D(RMS)
I
D(RMS)
=600 V, T
D
=300 mA
T
300 mA PF=1.0, V
3 A f=50 Hz 65 200 5mAV
0.7 1.3 mA V 15 25 V I 35 50
2000
2000
150
µ AV
µ sV
=3 V
T
=2.2 V
T
=5 V
AK
=Rated I
F
=V
RM
µ s PF=1.0, I
V/ µ s V/ µ
V/ µ s V/ µ s
C/W
°
V
, V
RM
s
, V
V
RM
V
, V
RM
V
, V
RM
=300 mA
T
Package
Critical State of Rise of Couplrd Input-Output Voltage
Common Mode Coupling Capacitor C Package Capacitance C
dv
/dt 10,000 V/ µ sI
(IO)
CM IO
0.01 pF
0.8 pF f=1 MHz, V
=0 A, V
T
=100 mA =100 mA =100 mA
=70 µ A =70 µ A =70 µ A
T(RMS)
FT
=424 VAC
DM
=300 mA
T
=400 VAC, T
DM
=400 VAC, T
DM
=400 VAC, T
DM
=400 VAC, T
DM
RM
IO
A
=V
=100
=0 V
°
=1.7 V
=424 VAC
DM
C
=25
C
°
A
=80
C
°
A
°
=25
C
A
°
=80
C
A
Figure 1. LED forward current vs. forward voltage
Figure 2. Forward voltage versus forward current
IL4116/4117/4118
5–2
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