Siemens IL4108 Datasheet

IL4108

ZERO VOLTAGE CROSSING

800 V TRIAC DRIVER OPTOCOUPLER

FEATURES

• On-State Current, 300 mA

• Zero V oltage Crossing

• Blocking V oltage, 800 V

• Isolation T est V oltage 5300 VACRMS

• High Input Sensitivity
IFT=2 mA, PF=1.0
IFT=5 mA, PF ≤ 1.0

• High Static dv/dt 10,000 V/ µ s

• Inverse Parallel SCRs Provide Commutating
dv/dt >10K V/ µ s

• Very Low Leakage <10 µ A

• Small 6-Pin DIP Package

• Underwriters Lab File #E52744

• VDE Approval #0884 (Optional with Option 1,
Add -X001 Suffix)

Maximum Ratings
Emitter

Reverse Voltage .....................................................6 V

Forward Current ................................................60 mA

Surge Current.......................................................2.5 A

Thermal Resistance.......................................750 °

Derate from 25 °

C ......................................1.33 mW/ ° C

C/W

Detector

Peak Off-state Voltage.........................................800 V

Peak Reverse Voltage.........................................800 V

RMS On-state Current .....................................300 mA

Single Cycle Surge..................................................3 A

Thermal Resistance.......................................125 °

C/W

Total Power Dissipation...................................500 mW

Derate from 25 °

C ........................................6.6 mW/ ° C

Package

Isolation Test Voltage (between emitter

and detector, climate per DIN 40046,

part 2, Nov. 74 (t=1 min.)....................5300 VAC

RMS

Pollution Degree (DIN VDE 0109).............................. 2

Creepage Distance........................................... ≥

Clearance.......................................................... ≥

7 mm
7 mm

Comparative Tracking Index per DIN IEC

112/VDE 0303 part 1, Group IIIa per

DIN VDE 6110................................................... ≥

Isolation Resistance

V

=500 V, T

IO

V

=500 V, T

IO

=25 ° C .................................... ≥ 10

A

=100 ° C .................................. ≥ 10

A

175

12

11

Ω

Ω

Storage Temperature Range.............–55 ° C to +125 ° C

Ambient Temperature Range............–55 °

Soldering Temperature (max. ≤

dip soldering ≥

0.5 mm from

10 sec.

C to +100 ° C

case bottom)................................................... 260 °

Package Dimensions in inches (mm)

.248 (6.30)
.256 (6.50)

.039

(1.00)

min.

4°

typ.

.018 (0.45)
.022 (0.55)

3

4

5

.335 (8.50)
.343 (8.70)

Pin One ID.

12

6

.130 (3.30)
.150 (3.81)

.020 (.051) min.

.031 (0.80)
.035 (0.90)

.100 (2.54) typ.

LED

Anode

LED

Cathode

NC

1

2

3

ZCC*

*Zero Crossing Circuit

.300 (7.62)

typ.

18° typ.

.010 (.25)
.014 (.35)

.300 (7.62)
.347 (8.82)

DESCRIPTION

The IL4108 consists of a GaAs IRLED optically coupled to a photosensi­tive zero crossing TRIAC network. The TRIAC consists of two inverse
parallel connected monolithic SCRs. These three semiconductors are
assembled in a six pin 0.3 inch dual in-line package, using high insula­tion double molded, over/under leadframe construction.

High input sensitivity is achieved by using an emitter follower pho­totransistor and a cascaded SCR predriver resulting in an LED trigger
current of less than 2 mA (DC).

The IL4108 uses two discrete SCRs resulting in a commutating dV/dt
greater than 10KV/ µ
static dV/dt of greater than 10KV/ µ

s. The use of a proprietary dv/dt clamp results in a

s. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between MT1 and MT2
of the TRIAC. When conducting, the FET clamps the base of the pho­totransistor, disabling the first stage SCR predriver.

The zero cross line voltage detection circuit consists of two enhance­ment MOSFETS and a photodiode. The inhibit voltage of the network is
determined by the enhancement voltage of the N-channel FET. The P­channel FET is enabled by a photocurrent source that permits the FET
to conduct the main voltage to gate on the N-channel FET. Once the
main voltage can enable the N-channel, it clamps the base of the pho­totransistor, disabling the first stage SCR predriver.

The 800V blocking voltage permits control of off-line voltages up to
240VAC, with a safety factor of more than two, and is sufficient for as
much as 380VAC.

The IL4108 isolates low-voltage logic from 120, 240, and 380 VAC lines
to control resistive, inductive, or capacitive loads including motors, sole-

C

noids, high current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial controls, office equip-

ment, and consumer appliances.

Triac

6

MT2
Substrate

5

do not
connect

Triac

4

MT1

.110 (2.79)
.150 (3.81)

5–141

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Condition
Emitter

Forward Voltage V
Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance, Junction to Lead R

F
BR

R

0
THJL

630 V I

1.16 1.35 V I

0.1 10

µ AV

25 pF V
750

° C/W

=10 mA

F

=10 µ A

R

=6 V

R

=0 V, f=1 MHz

F

Output Detector

Repetitive Peak Off-state Voltage V
Off-state Voltage V
Off-state Current I

Off-state Current I
On-state Voltage V
On-state Current I
Surge (Non-repetitive On-state Current) I
Trigger Current 1 I
Trigger Current 2 I

Trigger Current Termperature Gradient

Inhibit Voltage Temperature Gradient

Off-state Current in Inhibit State I
Capacitance between Input and Output Circuit C
Holding Current I
Latching Current I
Zero Cross Inhibit Voltage V
Turn-on Time t
Turn-off Time t

DRM
D(RMS)

D(RMS)1

D(RMS)2

TM
TM
TSM
FT1
FT2

I

∆

FT1

∆

I

FT2

V

∆

DINH

∆

T

j

DINH

IO
H
L

IH
ON
OFF

Critical Rate of Rise of Off-State Voltage dv/dt

dv/dt

Critical Rate of Rise of Voltage at
Current Commutation

dv/dt

dv/dt
Critical Rate of Rise of On-state Current di/dt/
Thermal Resistance, Junction to Lead R

THJL

cr
cr

crq
crq

cr

800 V I
565 V I

10 100 µ AV

200 µ AV

1.7 3 V I
300 mA PF=1.0, V
3 A f=50 Hz

2.0 mA V

6.0 mA V

/

T

∆

j

∆

/

T

j

/

7
7

14
14

–20 mV/K

50 200 µ AI

2.0 pF V

65 500 µ A
5mAV
15 25 V I
35
50

10000
5000

10000
5000

8A/µs

150 °C/W

=100 µ A

DRM
D(RMS)

=800 V, T

D

mA

=800 V, I

D

=300 mA

T

=5 V

D

=220 V, f=50 Hz,

op

T

=100 ° C, t

j

µ A/K
µ A/K

=I

F

FT1

=0, f=1 kHz

D

=2.2 V

T

=Rated I

F

µ sV

RM

=V

µ s PF=1.0, I

V/ µ s
V/

µ s

V/µs
V/µs

=0.67 V

V

D

T

=80°C

j

V

=0.67 V

D

di/dt
T

=25°C

j

T

=80°C

j

crq

Package

Critical Rate of Rise of Coupled Input/Output
Voltage

Common Mode Coupling Capacitor C
Package Capacitance C

dv

/dt 1000

(IO)

CM
IO

0

0.01 pF

0.8 pF f=1 MHz, VIO=0 V

V/µsI

=0 A,

T

V

RM=VDM

=70 µ A

F

T(RMS)

pF

, V

DRM

FT

=565 VAC

DM

=300 mA

T

DRM

DRM

<15 A/ms

=565 VAC

100 ° C, I

A

=Rated I

=1.7 V

>10 ms

, Tj=25°C

,

=0

F

FT

5–142

IL4108