Siemens IL410 Datasheet
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IL410
ZERO VOLTAGE CROSSING
600 V TRIAC DRIVER OPTOCOUPLER
FEATURES
• On-State Current, 300 mA
• Zero V oltage Crossing
• Blocking V oltage, 600 V
• Isolation Test Voltage from Double Molded
Package, 5300 VAC
RMS
• High Input Sensitivity
IFT=2 mA, PF=1.0
I
=5 mA, PF≤1.0
FT
• High Static dv/dt 10,000 V/µs
• Inverse Parallel SCRs Provide
Commutating dv/dt >10K V/µs
• Very Low Leakage <10 µA
• Small 6-Pin DIP Package
• Underwriters Lab File #E52744
• VDE Approval #0884 (Optional with Option 1,
Add -X001 Suffix)
Maximum Ratings
Emitter
Reverse Voltage ................................................ 6 V
Forward Current............................................ 60 mA
Surge Current.................................................2.5 A
Thermal Resistance.................................750
°
C/W
Power Dissipation......................................100 mW
Derate from 25
°
C ................................ 1.33 mW/°C
Detector
Peak Off-State V oltage................................... 600 V
Peak Reverse Voltage.................................... 600 V
RMS On-State Current................................300 mA
Single Cycle Surge............................................ 3 A
Thermal Resistance.................................. 125
°
C/W
Total Power Dissipation.............................. 500 mW
Derate from 25
°
C................................... 6.6 mW/°C
Package
Isolation Test V oltage.........................5300 VAC
RMS
Storage Temperature................... –55°C to +150°C
Operating Temperature................–55
Lead Soldering Temperature..............260
°
C to +100°C
°
C/5 sec.
Dimensions in inches (mm)
Pin One ID
12
5
6
Anode
Cathode
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
LED
1
LED
2
NC
ZCC*
3
*Zero Crossing Circuit
.300 (7.62)
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
typ.
Triac
6
MT2
Substrat
5
do not
connect
Triac
4
MT1
.110 (2.79
.150 (3.81
248 (6.30)
256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
3
4
.335 (8.50)
.343 (8.70)
DESCRIPTION
The IL410 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse
parallel connected monolithic SCRs. These three semiconductors are
assembled in a six pin 0.3 inch dual in-line package, using high insulation double molded, over/under leadframe construction.
High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger
current of less than 2 mA (DC).
The IL410 uses two discrete SCRs resulting in a commutating dV/dt
greater than 10KV/
static dV/dt of greater than 10KV/
µ
s. The use of a proprietary dv/dt clamp results in a
µ
s. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between MT1 and MT2
of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver.
The zero cross line voltage detection circuit consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network is
determined by the enhancement voltage of the N-channel FET. The Pchannel FET is enabled by a photocurrent source that permits the FET to
conduct the main voltage to gate on the N-channel FET. Once the main
voltage can enable the N-channel, it clamps the base of the phototransistor, disabling the first stage SCR predriver.
The 600V blocking voltage permits control of off-line voltages up to
240VAC, with a safety factor of more than two, and is sufficient for as
much as 380VAC.
The IL410 isolates low-voltage logic from 120, 240, and 380 V AC lines to
control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial controls, office equipment, and consumer appliances.
5–1
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Characteristics
Symbol Min Typ Max Unit Condition
Emitter
Forward Voltage V
Reverse Current I
Capacitance C
Thermal Resistance, Junction to Lead R
F
R
O
THJL
Output Detector
Off-State Voltage V
Off-State Current I
Off State Current I
On-State Voltage V
On State Current I
D(RMS)
D(RMS)1
D(RMS)2
TM
TM
424 460 V I
Surge (Non-Repititive),
On-State Current I
Trigger Current 1 I
Trigger Current 2 I
Trigger Current Temp. Gradient
Inhibit Voltage Temp. Gradient
Off-State Current in Inhibit State I
Capacitance Between Input and
Output Circuit
Holding Current I
Latching Current I
Zero Cross Inhibit Voltage V
Turn-On Time t
Turn-Off Time t
Critical Rate of Rise of Off-State
Voltage
TSM
FT1
FT2
∆
I
FT1
I
∆
FT2
∆
V
DINH
DINH
C
IO
H
L
IH
ON
OFF
dv/dt
dv/dt
cr
cr
/∆T
/∆T
/∆T
j
j
j
10000
5000
Critical Rate of Rise of Voltage
at Current Commutation dv/dt
dv/dt
Critical Rate of Rise of On-State
di/dt
Current
Thermal Resistance,
Junction to Lead
R
THJL
crq
crq
cr
10000
5000
Insulation and Isolation
Critical Rate of Rise of Coupled
Input/Output Voltage
Common Mode Coupling Capacitor C
Packing Capacitance C
Isolation Test Voltag, Input-Output V
dv
/dt 10000 V/µsI
(IO)
CM
IO
ISO
5300 VAC
Creepage ≥7mm
Clearance ≥7mm
Creepage Tracking Resistance per DIN
CTI 175
IEC 112/VDE 0303, Part 1 Group IIIa
per DIN VDE 10110
Isolation Resistance R
is
R
is
1.16 1.35 V IF=10 mA
0.1 10
µ
AV
=6 V
R
25 pF VF=0 V, f=1 MHz
750
10 100
200
°
C/W
D(RMS)
µ
AV
µ
AV
=600 V, TA=100°C, IF=0 mA
D
=600 V, IF=Rated I
D
=70 mA
1.7 3 V IT=300 mA
300 mA PF=1.0, V
T(RMS)
3 A f=50 Hz
2.0 mA VD=5 V
6.0 mA VOP=220 V, f=50 Hz, Tj=100°C, tpF>10 ms
7
7
14
14
µ
µ
A/K
A/K
-20 mV/K
50 200
µ
AI
F=IFT1
, V
DRM
2.0 pF VD=0, f=1 kHz
65 500
5mAV
15 25 V IF=Rated I
35
50
µ
A
=2.2 V
T
FT
µ
sV
µ
s PF=1.0, IT=300 mA
V/µs
V/µs
RM=VDM
VD=0.67 V
Tj=80°C
VD=0.67 V
V/µs
V/µs
Tj=25°C
Tj=80°C
=424 VAC
DRM
DRM
, di/dt
8 A/ms
150
°
C/W
=0 A, VRM=VDM=424 VAC
T
0.01 pF
0.8 pF f=1 MHz, VIO=0 V
Relative Humidity ≤ 50%
RMS
12
≥10
≥10
11
Ω
Ω
VIO=500 V TA=25°C
TA+100°C
FT
=1.7 V
, Tj=25°C
crq
≤ 15 A/ms
5–2
IL410
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