Siemens BTS430K2 Datasheet
Smart Highside Power Switch
)
)
)
)
PROFET® BTS 430 K2
Features
•
Clamp of negative voltage at output
•
Short-circuit protection
•
Current limitation
•
Thermal shutdown
•
Diagnostic feedback
•
Open load detection in ON-state
•
CMOS compatible input
•
Electrostatic Discharge (ESD) protection
•
Loss of ground and loss of V
•
Reverse battery protection
•
Undervoltage and overvoltage shutdown with auto-restart and hysteresis
protection
bb
1)
Product Summary
V
V
-
bb
V
bb (operation
V
bb (reverse
R
ON
I
L(lim
I
L(ISO
Avalanche Clamp 50 V
OUT
4.5 ... 32 V
-32 V
38
m
Ω
36 A
11 A
Application
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays and discrete circuits
5
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic fault
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
bb
PROFET
+ V
bb
OUT
3
5
Load
R
Voltage
source
V
Logic
Voltage
sensor
IN
2
ESD
4
ST
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
GND
Current
limit
unclamped
Open circuit
detection
Short circuit
Gate
protection
Limit for
ind. loads
detection
Temperature
sensor
1
Signal GND
Load GND
1)
Additional external diode required for charged inductive loads
Semiconductor Group 1 04.96
BTS 430 K2
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3Vbb+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
O Output to the load
(Load, L)
Maximum Ratings
at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3)
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation
Electrostatic discharge capability (ESD)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
V
I
T
T
P
E
V
V
I
I
bb
L
j
stg
tot
AS
ESD
IN
IN
ST
54 V
self-limited A
-40 ...+150
°C
-55 ...+150
125 W
1.7 J
2.0 kV
-10 ... +16 V
±5.0
mA
±5.0
Thermal resistance chip - case:
chip - ambient:
R
R
thJC
thJA
≤ 1
≤ 75
K/W
Semiconductor Group 2
BTS 430 K2
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C,
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
V
= 12 V unless otherwise specified
bb
min typ max
IL = 2 A
T
=25 °C:
j
T
=150 °C:
j
Nominal load current (pin 3 to 5)
ISO Proposal:
V
ON
= 0.5 V,
T
= 85 °C
C
Output current (pin 5) while GND disconnected or
GND pulled up, see diagram page 7
Turn-on time to 90%
Turn-off time to 10%
R
= 12 Ω
L
V
V
OUT
OUT
Slew rate on
10 to 30%
V
OUT
R
,
= 12 Ω
L
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12 Ω
Operating Parameters
Operating voltage
Undervoltage shutdown
Undervoltage restart
T
=-40...+150°C:
j
T
=-40...+150°C:
j
T
=-40...+150°C:
j
Undervoltage restart of charge pump
see diagram page 12
Undervoltage hysteresis
V
∆
bb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection
I
=4 mA
bb
=
V
bb(u rst)
-
V
bb(under)
)
2
T
=-40...+150°C:
j
T
=-40...+150°C:
j
T
=-40...+150°C: ∆
j
T
=-40...+150°C:
j
Standby current (pin 3)
=5
T
=-40...+25°C
j
T
=150°C:
j
VIN=0
Operating current (Pin 1)3),
V
IN
:
:
:
R
I
I
t
t
dV /dt
-dV/dt
V
V
V
V
∆
V
V
V
I
I
ON
L(ISO)
L(GNDhigh)
on
off
on
off
bb(on)
bb(under)
bb(u rst)
bb(ucp)
V
bb(under)
bb(over)
bb(o rst)
V
bb(over)
bb(AZ)
bb(off)
GND
-- 30
55
38
70
mΩ
911 --A
-- -- 1 mA
50
10
160
260
--
60
µs
0.4 -- 2 V/µs
1--4V/µs
4.5 -- 32 V
2.4 -- 4.5 V
-- -- 4.5 V
-- 6.5 7.5 V
-- 0.2 -- V
32 -- 46 V
32 -- -- V
-- 0.2 -- V
50 57 -- V
µA
--
--
12
18
25
60
-- 1.1 -- mA
2)
)
3
see also
Add
V
I
, if
ST
in table protection functions and circuit diagram page 7. Meassured without load
ON(CL)
I
> 0
ST
Semiconductor Group 3
.
BTS 430 K2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C,
Protection Functions
Overload current limit (pin 3 to 5)
T
=-40...+150°C
j
Short circuit shutdown delay after input pos. slope
V
>
ON
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at V
OUT
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation4),
T
j Start
Reverse battery (pin 3 to 1)
Integrated resistor in Vbb line
V
= 12 V unless otherwise specified
bb
V
ON(SC)
,
= Vbb - V
= 150 °C
ON(CL)
min typ max
T
=-40..+150°C:
j
I
L(lim)
t
d(SC)
V
ON(CL)
19 36 57 A
80 -- 400
--
50 -- V
µ
V
V
ON(SC)
T
jt
∆T
jt
E
AS
= 12 V:
V
bb
= 24 V:
V
bb
)
5
E
Load12
E
Load24
-
V
R
bb
bb
-- 8.3 --
150 -- -- °C
-- 10 -- K
-- -- 1.7
1.3
1.0
-- -- 32 V
-- 120 --
Ω
s
J
Diagnostic Characteristics
I
Open load detection current Tj=25..150°C:
(on-condition, )
Tj=-40 °C
Leakage output current
(off-condition)
4)
While demagnetizing load inductance, dissipated energy in PROFET is
V
2
= 1/
E
AS
)
5
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
these condition is dependent on the size of the heatsink. Reverse I
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
2
*
*
L
I
L
ON(CL)
* (
V
ON(CL)
of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
GND
), see diagramm page 8
-
V
bb
L (OL)
:
I
L(off)
can be reduced by an additional
GND
10
10
-- 6 --
= ∫
E
AS
V
ON(CL)
--
--
*
(t) dt, approx.
i
L
500
600
mA
A
µ
Semiconductor Group 4
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