Siemens BTS425L1 Datasheet

Smart Highside Power Switch

)

PROFET® BTS 425 L1

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

1

)

Product Summary

Overvoltage protection Operating voltage

On-state resistance Load current (ISO) Current limitation

V

bb(AZ

V

bb(on

R

ON

I

L(ISO

I

L(SCr

43 V

5.0 ... 24 V 60

7.0 A 17 A

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of

•

Electrostatic discharge (ESD) protection

V

protection

bb

Application

•

µC compatible power switch with diagnostic

Standard

TO-220AB/5

5

Straight leads

5

1

SMD

feedback for 12 V DC grounded loads

•

Most suitable for resistive and lamp loads

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

m

Ω

5

+ V

bb

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

Open load

Short to Vbb

detection

Gate

protection

Temperature

sensor

PROFET

R

O

GND

3

OUT

5

Load



1

Signal GND

Load GND

)

1

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Semiconductor Group 1 02.97

BTS 425 L1

)

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

at

T

= 25 °C unless otherwise specified

Maximum Ratings

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

)

Load dump protection

)

3

R

= 2 Ω,

I

R

= 1.7 Ω,

L

2

V

LoadDump

t

= 200 ms, IN= low or high

d

=

U

+

V

A

,

s

U

= 13.5 V

A

Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Electrostatic discharge capability (ESD

(Human Body Model

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

all other pins:

Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6

IN:

V

bb

V

bb

V

Load dump

I

L

T

j

T

stg

P

tot

V

ESD

V

IN

I

IN

I

ST

43 V 24 V

)

4

60 V

self-limited A

-40 ...+150

°C

-55 ...+150 75 W

1.0

kV

2.0

-10 ... +16 V ±2.0

mA

±5.0

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance chip - case:

junction - ambient (free air):

R

thJC

thJA

--

----1.67

--

SMD version, device on PCB5):--34--

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

)

5

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

2

(one layer, 70µm thick) copper area for V

Semiconductor Group 2

K/W

75

bb

BTS 425 L1

)

j

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

T

at

= 25 °C,

j

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I

= 2 A

L

Nominal load current, ISO Norm (pin 3 to 5

V

= 0.5 V,

ON

Output current (pin 5) while GND disconnected or

GND pulled up,

page 7 Turn-on time IN to 90% Turn-off time IN to 10%

R

= 12 Ω

L

Slew rate on 10 to 30% Slew rate off

70 to 40%

V

= 12 V unless otherwise specified

bb

T

= 85 °C

C

V

=30 V,

bb

T

=-40...+150°C

,

j

V

R

= 12 Ω

,

R

L

= 12 Ω

V

OUT

V

= 0, see diagram

IN

T

=-40...+150°C

,

j

T

=-40...+150°C

,

j

T

=25 °C:

j

T

=150 °C:

j

V V

OUT OUT

: :

R

I I

t t

dV /dt

-dV/dt

ON

L(ISO) L(GNDhigh)

on off

on

off

min typ max

-- 50 100

60

120

mΩ

5.8 7.0

-- A

-- -- 10 mA

80 80

200 230

400 450

0.1 -- 1 V/µs

µs

Operating Parameters

)

Operating voltage

6

Undervoltage shutdown Undervoltage restart

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

Undervoltage restart of charge pump see diagram page 10

T

=-40...+150°C:

j

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

=40 mA

bb

=

V

bb(u rst)

-

V

bb(under)

)

7

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C: ∆

j

T

=-40...+150°C:

j

Standby current (pin 3)

V

=0

IN

Leakage output current (included in

IN

V

=0

Operating current (Pin 1)8),

=-40...+150°C

T

V

=5 V,

IN

T

=-40...+25°C

j

T

= 150°C:

j

I

)

bb(off

:

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

V

bb(AZ)

I

bb(off)

I

L(off)

I

GND

5.0 -- 24 V

3.5 -- 5.0 V

-- -- 5.0 V

-- 5.6 7.0 V

-- 0.2 -- V

24 -- 34 V 23 -- -- V

-- 0.5 -- V

42 47 -- V

--

10 12

25 28

µA

-- -- 12 µA

-- 1.8 3.5 mA

6)

At supply voltage increase up to

7)

)

8

See also Add

V

I

, if

ST

in table of protection functions and circuit diagram page 7.

ON(CL)

I

> 0, add

ST

V

= 5.6 V typ without charge pump,

bb

I

V

, if

IN

>5.5 V

IN

V

OUT

≈

V

- 2 V

bb

Semiconductor Group 3

BTS 425 L1

j

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)

Repetitive short circuit shutdown current limit

T

=

j

Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) Reverse battery voltage drop

= -2 A

I

L

Diagnostic Characteristics

Open load detection current

(on-condition, )

Open load detection voltage

Internal output pull down

(pin 5 to 1),

V

= 12 V unless otherwise specified

bb

T

(see timing diagrams, page 9)

jt

V

OUT

=5 V,

=-40..150°C

T

j

T

=+150°C:

j

)

9

(V

out

> V

bb

)

T

=25..150°C:

T

j

)

10

(off-condition)

=-40..150°C:

T

j

=-40°C:

T

=25°C:

=150 °C:

j

=-40 °C

:

I

L(SCp)

I

L(SCr)

T

jt

∆T

jt

-

V

bb

-V

ON(rev)

I

L (OL)

V

OUT(OL)

R

O

min typ max

27 20 12

37 30 18

47 40 25

A

-- 17 -- A

150 -- -- °C

-- 10 -- K

-- -- 32 V

150 150

--

610 --

600 450

950 750

mV

mA

234V

41030k

Ω

)

9

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

10)

External pull up resistor required for open load detection in off state.

Semiconductor Group 4