Smart Highside Power Switch
)
)
)
)
PROFET® BTS 410 E2
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of
•
Electrostatic discharge (ESD) protection
1
)
V
protection
bb
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
TO-220AB/5
5
Standard
Straight leads
V
bb(AZ
V
bb(on
R
ON
I
L(ISO
I
L(SCr
1
65 V
4.7 ... 42 V
220
1.8 A
5A
5
1
SMD
Application
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
m
Ω
5
+ V
bb
Voltage
source
V
Logic
Voltage
sensor
IN
2
ESD
4
ST
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
GND
Current
limit
unclamped
Open load
detection
Short circuit
Gate
protection
Limit for
ind. loads
detection
Temperature
sensor
PROFET
3
OUT
5
Load
1
Signal GND
Load GND
)
1
With external current limit (e.g. resistor R
=150 Ω) in GND connection, resistors in series with IN and ST
GND
connections, reverse load current limited by connected load.
Semiconductor Group 1 03.97
BTS 410 E2
j,
)
)
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3Vbb+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
O Output to the load
(Load, L)
at
T
= 25 °C unless otherwise specified
Maximum Ratings
j
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3)
)
Load dump protection
)
3
R
= 2 Ω,
I
R
= 6.6 Ω,
L
2
V
LoadDump
t
= 400 ms, IN= low or high
d
=
U
+
V
A
,
s
U
= 13.5 V
A
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
V
bb
V
Load dump
I
L
T
j
T
stg
P
tot
65 V
)
4
100 V
self-limited A
-40 ...+150
°C
-55 ...+150
50 W
Inductive load switch-off energy dissipation, single pulse
V
= 12V,
Electrostatic discharge capability (ESD
(Human Body Model
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
T
= 150°C,
start
T
= 150°C const.
C
I
= 1.8 A, Z
L
= 2.3 H, 0 Ω:
L
all other pins:
IN:
E
V
V
I
I
AS
ESD
IN
IN
ST
4.5 J
1
kV
2
-0.5 ... +6 V
±5.0
mA
±5.0
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
junction - ambient (free air):
R
R
thJC
thJA
--
--
--
--
SMD version, device on PCB5):--35--
)
2
Supply voltages higher than V
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
R
= internal resistance of the load dump test pulse generator
I
4)
V
Load dump
)
5
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
require an external current limit for the GND and status pins, e.g. with a
bb(AZ)
2
(one layer, 70µm thick) copper area for V
Semiconductor Group 2
2.5
75
K/W
bb
BTS 410 E2
)
j
)
j
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
T
at
= 25 °C,
j
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
= 1.6 A
L
Nominal load current, ISO Norm (pin 3 to 5
V
= 0.5 V,
ON
Output current (pin 5) while GND disconnected or
GND pulled up,
page 7,
Turn-on time IN to 90%
Turn-off time IN to 10%
R
= 12 Ω
L
Slew rate on
10 to 30%
Slew rate off
70 to 40%
V
= 12 V unless otherwise specified
bb
T
= 85 °C
C
V
bb
T
=-40...+150°C
T
=-40...+150°C
,
j
V
V
OUT
OUT
R
,
R
,
= 12 Ω
L
L
=30 V,
= 12 Ω
V
IN
T
=-40...+150°C
,
j
T
=-40...+150°C
,
j
T
=25 °C:
j
T
=150 °C:
j
= 0, see diagram
V
OUT
V
OUT
:
:
R
I
I
t
t
dV /dt
-dV/dt
ON
L(ISO)
L(GNDhigh)
on
off
on
off
min typ max
-- 190
390
220
440
mΩ
1.6 1.8 -- A
-- -- 1 mA
12
5
--
125
--
85
-- -- 3 V/µs
-- -- 6 V/µs
µs
Operating Parameters
Operating voltage
6
T
j
)
Undervoltage shutdown
T
j
Undervoltage restart
T
j
Undervoltage restart of charge pump
see diagram page 12
Undervoltage hysteresis
V
∆
bb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection
I
=4 mA
bb
=
V
bb(u rst)
-
V
bb(under)
)
7
T
j
T
j
T
j
T
j
Standby current (pin 3)
V
=0
IN
Leakage output current (included in
IN
V
=0
Operating current (Pin 1)8),
=-40...+150°C
T
)
6
At supply voltage increase up to
7)
Meassured without load. See also
V
=5 V,
IN
V
= 5.6 V typ without charge pump,
bb
V
ON(CL)
:
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
V
∆
bb(under)
V
bb(over)
V
bb(o rst)
V
bb(over)
V
bb(AZ)
I
bb(off)
I
L(off)
I
GND
V
4.7 -- 42 V
2.9
2.7
--
--
-- -- 4.9 V
-- 5.6 6.0 V
-- 0.1 -- V
42 -- 52 V
40 -- -- V
-- 0.1 -- V
65 70 -- V
--
--
10
18
-- -- 20 µA
-- 1 2.1 mA
≈
V
OUT
bb
- 2 V
=-40...+150°C:
T
=25°C:
j
=-40...+150°C:
=-40...+150°C:
=-40...+150°C:
=-40...+150°C:
=-40...+150°C: ∆
=-40...+150°C:
T
=-40...+25°C
j
T
= 150°C:
j
I
)
bb(off
in table of protection functions and circuit diagram page 7.
4.5
4.7
15
25
V
µA
Semiconductor Group 3
BTS 410 E2
j
j
Parameter and Conditions Symbol Values Unit
at
T
= 25 °C,
j
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
( max 450 µs if
Repetitive overload shutdown current limit
V
ON
Short circuit shutdown delay after input pos. slope
V
>
ON
min value valid only, if input "low" time exceeds 60 µs
Output clamp (inductive load switch off)
at
V
OUT
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
V
= 8 V,
V
ON(SC)
=
V
bb
= 12 V unless otherwise specified
bb
V
>
T
-
=
j
,
V
V
ON
T
ON(CL)
ON(SC)
(see timing diagrams, page 10)
jt
I
L
)
= 40 mA,
I
= 1 A,
L
)
10
T
=-40..+150°C:
j
T
=-40..+150°C:
j
T
=-40..+150°C: -- -- 75
j
T
=-40°C:
T
=25°C:
T
=+150°C:
j
min typ max
)
9
,
I
L(SCp)
I
L(SCr)
9
--
4
12
--
23
A
--
--
15
-- 5 -- A
t
d(SC)
V
ON(CL)
V
ON(SC)
T
jt
∆T
-
V
bb
jt
-- -- 450
µ
61 68 73 V
-- 8.5 -- V
150 -- -- °C
-- 10 -- K
-- -- 32 V
s
Diagnostic Characteristics
Open load detection current
(on-condition)
)
8
Add
)
9
Short circuit current limit for max. duration of t
)
10
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
, if
I
ST
> 0, add
I
ST
, if
V
>5.5 V
IN
I
IN
=-40 ..150°C:
T
j
d(SC) max
I
L (OL)
2 -- 150
=450 µs, prior to shutdown
mA
Semiconductor Group 4
BTS 410 E2
Parameter and Conditions Symbol Values Unit
at
T
= 25 °C,
j
Input and Status Feedback
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2),
On state input current (pin 2),
Status invalid after positive input slope
(short circuit)
Status invalid after positive input slope
(open load)
Status output (open drain)
Zener limit voltage
ST low voltage
V
= 12 V unless otherwise specified
bb
)
11
V
= 0.4 V
IN
V
= 5 V
IN
T
=-40 ... +150°C:
j
T
=-40 ... +150°C:
j
T
=-40...+150°C,
j
T
=-40...+150°C,
j
T
=-40..+150°C:
j
T
=-40..+150°C:
j
I
= +50 uA:
ST
I
= +1.6 mA:
ST
V
IN(T+)
V
IN(T-)
∆
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST SC)
t
d(ST)
V
ST(high)
V
ST(low)
min typ max
1.5 -- 2.4 V
1.0 -- -- V
-- 0.5 -- V
1--30
10 25 70
µ
µ
-- -- 450
300 -- 1400
5.0
--
6
--
--
0.4
A
A
µ
µ
V
s
s
11)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Semiconductor Group 5
Truth Table
BTS 410 E2
Input- Output Status
level level 412
Normal
operation
Open load L
Short circuit
to GND
Short circuit
to V
bb
Overtemperature
Undervoltage
Overvoltage L
B2
L
H
H
L
H
L
H
L
H
L
H
H
12
L
H
)
H
L
L
H
H
L
L
L
L
L
L
H
H
L
H
H
L
L
H
L
L
14)
L
14)
L
L
L
410
D2
H (L
L
L
H
H
H
L
H
L
H
13)
L
L
14)
14)
L
L
410
E2/F2
)HH (L
H
H
H
L
H
L
13)
L
L
H
H
H
H
410
G2
)HH (L
410
H2
H
H
H
L
H
H
H
H
L
H
H
L
L
13)
)
L
L
H
H
H
H
H
L
L
H
H
H
H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
Terms
V
bb
I
bb
R
GND
3
V
bb
PROFET
GND
1
I
GND
OUT
I
V
L
5
V
ON
OUT
I
IN
IN
2
I
ST
ST
V
IN
4
V
ST
Status output
R
ST(ON)
ESD-
GND
ESD-Zener diode: 6 V typ., max 5 mA;
R
ST(ON)
< 250 Ω at 1.6 mA, ESD zener diodes are not
ZD
+5V
ST
to be used as voltage clamp at DC conditions.
Input circuit (ESD protection)
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
R
IN
I
ESD-
ZD ZD
I1 I2
GND
I
I
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
)
12
Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
)
13
Low resistance short
)
14
No current sink capability during undervoltage shutdown
V
to output may be detected in ON-state by the no-load-detection
bb
Semiconductor Group 6
Short circuit detection
Fault Condition:
V
> 8.5 V typ.; IN high
ON
+ V
BTS 410 E2
Open-load detection
I
ON-state diagnostic condition:
V
<
ON
high
bb
*
R
ON
L(OL)
+ V
; IN
bb
V
ON
OUT
Logic
unit
Short circuit
detection
Inductive and overvoltage output clamp
+ V
bb
V
Z
V
ON
OUT
PROFET
V
clamped to 68 V typ.
ON
GND
ON
Logic
unit
GND disconnect
IN
2
ST
4
V
V
IN
V
ST
bb
Open load
detection
3
V
PROFET
GND
1
bb
V
GND
OUT
V
ON
OUT
5
Overvolt. and reverse batt. protection
+ V
V
R
R
V
= 6.2 V typ.,
Z1
R
= 15 k
ST
IN
IN
Logic
ST
ST
V
Z1
V
= 70 V typ.,
Z2
Ω
Z2
PROFET
GND
R
GND
Signal GND
R
= 150 Ω, RIN,
GND
≈
V
V
bb
Any kind of load. In case of Input=high is
Due to V
>0, no VST = low signal available.
GND
OUT
V
-
IN
IN(T+)
.
GND disconnect with GND pull up
3
V
V
IN
bb
PROFET
GND
1
V
-
IN(T+)
OUT
5
V
GND
device stays off
V
bb
V
IN
Any kind of load. If V
Due to V
>0, no VST = low signal available.
GND
2
4
V
GND
ST
IN
ST
>
Semiconductor Group 7
Vbb disconnect with energized inductive
load
3
high
V
bb
IN
2
ST
4
V
bb
PROFET
GND
1
OUT
5
BTS 410 E2
Ω
:
with an approximate solution for R
·
I
L
L
·
E
=
AS
(
V
+ |V
bb
OUT(CL)
·
R
2
L
Maximum allowable load inductance for
a single switch off
L = f (I
V
=
bb
L
[mH]
10000
);
L
12 V,
T
j,start
R
L
=
150°C,
=
0
T
C
Ω
> 0
L
ln
|)·
(1+
150°C const.,
=
I
L
|V
OUT(CL)
·
R
L
|
)
Normal load current can be handled by the PROFET
itself.
Vbb disconnect with charged external
inductive load
S
3
high
V
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
IN
2
ST
4
V
bb
PROFET
GND
1
OUT
5
Inductive Load switch-off energy
dissipation
E
bb
E
AS
E
E
E
Load
L
R
V
IN
=
ST
bb
PROFET
GND
OUT
L
Z
{
R
L
L
Energy stored in load inductance:
2
1
E
·L·
=
L
I
/
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
= Ebb + EL - ER= ∫ V
AS
ON(CL)
·
iL(t) dt,
1000
100
10
D
1
123456
Typ. transient thermal impedance chip case
Z
= f(tp, D), D=tp/T
thJC
Z
[K/W]
thJC
10
1
0.1
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
I
[A]
L
t
[s]
p
Semiconductor Group 8
BTS 410 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150 Ω in GND connection, protection against loss of
ground
Type
BTS
Logic version
Overtemperature protection with hysteresi s
15)16
T
>150 °C, latch function
j
T
>150 °C, with auto-restart on cooling
j
)
Short circuit to GND protection
switches off when
)
15
(when first turned on after approx. 150 µs)
typ
switches off when
(when first turned on after approx. 150 µs)
Achieved through overtemperature protection
V
>3.5 V typ. and
ON
V
>8.5 V typ.
ON
15)
V
bb
> 7 V
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart
17
Status feedback for
overtemperature
short circuit to GND
short to V
open load
undervoltage
overvoltage
bb
Status output type
CMOS
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to
V
-
V
bb
ON(CL)
Load current limit
high level
low level
(can handle loads with high inrush currents)
(better protection of application)
Protection against loss of GND
412 B2 410D2 410E2 410F2 410G2 410H2 307 308
BDEFGH
XX
X
XXXX
X
X X XX
XXXXXXXX
)
XXXXXX-X
X
X
X
X
X
X
XX
XXXXXXXX
XXX
XXXXXXXX
X
X
18)
-
X
X
X
X
X
18)
X
-
-
XXXXXX
X
X
X
X
X
18)
X
-
-
XXXXX
X
-
18)
X
-
-
X
X
XX
X
XXX
X
X
X
X
-
-
X
X
X
X
X
-
X
X
X
X
X
-
-
)
15
Latch except when
0 V only if forced externally). So the device remains latched unless
between turn on and t
16)
With latch function. Reseted by a) Input low, b) Undervoltage
)
17
No auto restart after overvoltage in case of short circuit
)
18
Low resistance short
V
V
-
bb
OUT
.
d(SC)
V
to output may be detected in ON-state by the no-load-detection
bb
<
V
ON(SC)
after shutdown. In most cases
Semiconductor Group 9
V
bb
<
= 0 V after shutdown (
OUT
V
V
(see page 4). No latch
ON(SC)
V
OUT
≠
Timing diagrams
BTS 410 E2
Figure 1a: V
IN
V
bb
V
OUT
ST open drain
in case of too early
t
approx. 150 µs
d(bb IN)
turn on:
bb
t
A
d(bb IN)
A
V
=high the device may not turn on (curve A)
IN
Figure 2b: Switching an inductive load
IN
t
ST
V
OUT
I
L
I
t
*) if the time constant of load is too large, open-load-status may
occur
L(OL)
d(ST)
*)
t
Figure 2a: Switching a lamp,
IN
ST
V
OUT
I
L
Figure 3a: Turn on into short circuit,
IN
ST
V
OUT
t
d(SC)
I
L
t
t
Semiconductor Group 10
t
approx. -- µs if
d(SC)
V
V
-
bb
> 8.5 V typ.
OUT
BTS 410 E2
Figure 3b: Turn on into overload,
IN
I
L
I
L(SCp)
I
L(SCr)
ST
Figure 4a: Overtemperature:
T
Reset if
T
<
j
jt
IN
ST
V
OUT
T
t
J
t
Heating up may require several seconds,
V
V
-
bb
< 8.5 V typ.
OUT
Figure 3c: Short circuit while on:
IN
ST
V
OUT
I
L
**)
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
t
ST
V
OUT
I
L
d(ST)
open
t
**) current peak approx. 20 µs
Semiconductor Group 11
t
BTS 410 E2
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
t
d(ST OL1)
ST
V
OUT
I
L
= tbd µs typ., t
t
d(ST OL1)
normal
d(ST OL2)
open
= tbd µs typ
t
d(ST OL2)
normal
Figure 6b: Undervoltage restart of charge pump
V
on
off-state
V
bb(under)
t
charge pump starts at
Figure 7a: Overvoltage:
V
bb(u rst)
V
bb(u cp)
V
bb(ucp)
V
on-state
V
bb(o rst)
=5.6 V typ.
bb(over)
V
ON(CL)
off-state
V
bb
Figure 6a: Undervoltage:
IN
V
bb
V
OUT
ST open drain
V
bb(under)
V
bb(u cp)
V
bb(u rst)
IN
V
V
bb
OUT
V
ON(CL)
V
bb(over)
V
bb(o rst)
ST
t
t
Semiconductor Group 12
Figure 9a: Overvoltage at short circuit shutdown:
IN
V
V
bb
I
ST
OUT
L
V
bb(o rst)
Output short to GND
short circuit shutdown
BTS 410 E2
t
Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown.
Semiconductor Group 13
Package and Ordering Code
All dimensions in mm
BTS 410 E2
SMD TO-220AB/5, Opt. E3062
BTS410E2 E3062A T&R: Q67060-S6102-A4
Ordering code
Standard TO-220AB/5
BTS 410 E2 Q67060-S6102-A2
Ordering code
TO-220AB/5, Option E3043
BTS 410 E2 E3043 Q67060-S6102-A3
Ordering code
Semiconductor Group 14
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