Siemens BSS79C, BSS79B, BSS81C, BSS81B Datasheet

NPN Silicon Switching Transistors BSS 79

BSS 81

● High DC current gain

● Low collector-emitter saturation voltage

● Complementary types: BSS 80, BSS 82 (PNP)

Type Ordering Code

BSS 79 B
BSS 79 C
BSS 81 B
BSS 81 C

Marking

CEs
CFs
CDs
CGs

(tape and reel)

Q62702-S503
Q62702-S501
Q62702-S555
Q62702-S605

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol

BSS 79

Collector-emitter voltage V

CE0 40 V

Collector-base voltage VCB0
Emitter-base voltage VEB0
Collector current IC mA
Peak collector current I
Base current I

CM A
B mA

Peak base current IBM

Values

BSS 81

35

75

6

800

1
100
200

Unit

1)

Total power dissipation, T
Junction temperature T
Storage temperature range T

S =77 ˚C Ptot mW

j ˚C
stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Junction - soldering point

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 290 K/W

th JS ≤ 220

R

330
150

5.91

Electrical Characteristics

I
I

I
I

I

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BSS 79

BSS 81

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 10 mA BSS 79

BSS 81

V

Collector-base breakdown voltage

C = 10 µA

Emitter-base breakdown voltage

E = 10 µA

Collector-base cutoff current

CB = 60 V

V

CB = 60 V, TA = 150 ˚C

V

EB = 3 V

V

(BR)CB0 75 – –

V

(BR)EB0 6––

CB0

I

I

EB0 ––10

40
35

–
–

–
–

–
–

–
–

10
10

DC current gain

C = 100 µA, VCE = 10 V BSS 79 B/81 B

BSS 79 C/81 C

C = 1 mA, VCE = 10 V BSS 79 B/81 B

BSS 79 C/81 C

C = 10 mA, VCE = 10 V

1)

BSS 79 B/81 B
BSS 79 C/81 C

C = 150 mA, VCE = 10 V

1)

BSS 79 B/81 B
BSS 79 C/81 C

C = 500 mA, VCE = 10 V

1)

BSS 79 B/81 B
BSS 79 C/81 C

Collector-emitter saturation voltage

C = 150 mA, IB = 15 mA
C = 500 mA, IB = 50 mA

Base-emitter saturation voltage

C = 150 mA, IB = 15 mA
C = 500 mA, IB = 50 mA

1)

1)

VBEsat

20
35
25
50
35
75
40
100
25
40

–
–

–
–

–
–
–
–
–
–
–
–
–
–

–
–

–
–

–
–
–
–
–
–
120
300
–
–

0.3

1.3

1.2

2.0

VCollector-emitter breakdown voltage

nA

µA

nAEmitter-base cutoff current

–hFE

VVCEsat

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2