Siemens BSS64, BCX41 Datasheet
BCX 41
BSS 64
NPN Silicon AF and Switching Transistor BCX 41
BSS 64
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: BCX 42, BSS 63 (PNP)
Type Ordering Code
BCX 41
BSS 64
Marking
EKs
AMs
(tape and reel)
Q62702-C1659
Q62702-S535
Pin Configuration
1 2 3
B E C
Package
SOT-23
Maximum Ratings
Parameter Symbol Values Unit
BSS 64 BCX 41
Collector-emitter voltage V
Collector-base voltage VCB0 120
Emitter-base voltage V
Collector current I
Peak collector current I
Base current I
Peak base current I
Total power dissipation, T
S =79˚C Ptot 330 mW
CE0 80 V
125
125
EB0 5
C 800 mA
CM 1A
B 100 mA
BM 200
5
1)
Junction temperature T
Storage temperature range T
j 150 ˚C
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 285 K/W
Junction - soldering point Rth JS ≤ 215
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
Parameter Symbol
min. typ. max.
DC characteristics
BCX 41
BSS 64
UnitValues
(BR)CE0
V
C = 10 mA BSS 64
BCX 41
1
Collector-base breakdown voltage
C = 100 µA BSS 64
Emitter-base breakdown voltage
E = 10 µA
Collector cutoff current
CB = 80 V BSS 64
V
CB = 100 V BCX 41
V
CB = 80 V, TA = 150 ˚C BSS 64
V
CB = 100 V, TA = 150 ˚C BCX 41
V
)
BCX 41
(BR)CB0
V
V
(BR)EB0 5––
I
CB0
80
125
120
125
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
100
20
20
ICE0
CE = 100 V
V
A = 85 ˚C BCX 41
T
A = 125 ˚C BCX 41
T
I
EB0 – – 100
EB = 4 V
V
1
)
C = 100 µA, VCE = 1 V BCX 41
C = 1 mA, VCE = 1 V BSS 64
C = 4 mA, VCE = 1 V BSS 64
C = 10 mA, VCE = 1 V BSS 64
C = 20 mA, VCE = 1 V BSS 64
C = 100 mA, VCE = 1 V BCX 41
C = 200 mA, VCE = 1 V BCX 41
1
)
C = 300 mA, IB = 30 mA BCX 41
C = 4 mA, IB = 0.4 mA BSS 64
C = 50 mA, IB = 15 mA BSS 64
1
Base-emitter saturation voltage
C = 300 mA, IB = 30 mA BCX 41
)
AC characteristics
h
FE
VCEsat
V
BEsat – – 1.4
–
–
25
–
20
–
–
63
40
–
–
–
–
–
–
60
80
80
55
–
–
–
–
–
10
75
–
–
–
–
–
–
–
0.9
0.7
3.0
VCollector-emitter breakdown voltage
nA
nA
µA
µA
µACollector cutoff current
nAEmitter cutoff current
–DC current gain
VCollector-emitter saturation voltage
f
T – 100 –
C = 20 mA, VCE = 5 V, f = 20 MHz
MHzTransition frequency
CB = 10 V, f = 1 MHz
V
1)
Pulse test: t ≤ 300 µs, D = 2 %
C
obo –12–
pFOutput capacitance
Semiconductor Group 2
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