Siemens BF2030W Datasheet

BF 2030W

Semiconductor Group

Jun-05-19981

Silicon N-Channel MOSFET Tetrode
Preliminary data

• For low noise, high gain controlled
input stages up to 1GHz

• Operating voltage 5V

VPS05605

4

2

1

3

ESD: Electrostatic discharge sensitive device, observe handling precaution

Type Marking Ordering Code Pin Configuration Package

BF 2030W NEs Q62702-F1774 1 = D 2 = S 3 = G1 4 = G2 SOT-343

Maximum Ratings

Unit

Parameter ValueSymbol

Drain-source voltage

V

DS

V14

40 mAContinuos drain current

I

D

Gate 1/gate 2 peak source current ±

I

G1/2SM

10

Gate 1 (external biasing) +

V

G1SE

7 V

200 mWTotal power dissipation,

T

S

= 94 °C

P

tot

Storage temperature

T

stg

°C-55 ...+150

Channel temperature

T

ch

150

Thermal Resistance

Channel - soldering point

≤280 K/W

R

thchs

Semiconductor Group 1 1998-11-01

BF 2030W

Semiconductor Group

Jun-05-19982

Electrical Characteristics at

T

A

= 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC characteristics

Drain-source breakdown voltage

I

D

= 650 µA, -

V

G1S

= 4 V, -

V

G2S

= 4 V

V

(BR)DS

- - V12

Gate 1 - source breakdown voltage
+

I

G1S

= 10 mA,

V

G2S

= 0 V,

V

DS

= 0 V

+

V

(BR)G1SS

- -8.5

Gate 2 - source breakdown voltage
±

I

G2S

= 10 mA,

V

G1S

=

V

DS

= 0

V- -+

V

(BR)G2SS

8.5

Gate 1 source current

V

G1S

= 5 V,

V

G2S

= 0 V

50+

I

G1SS

- nA-

50Gate 2 source leakage current

V

G2S

= 5 V,

V

G1S

= 0 V,

V

DS

= 0 V

- -+

I

G2SS

Drain current

V

DS

= 5 V,

V

G1S

= 0 V,

V

G2S

= 4 V

- µA

I

DSS

-

Drain-source current

V

DS

= 5 V,

V

G2S

= 4 V,

R

G1

= 20 kΩ

12 mA- -

I

DSX

V

V

G2S(p)

Gate 2-source pinch-off voltage

V

DS

= 5 V,

I

D

= 20 µA

-0.80.3

0.3 0.7 -Gate 1-source pinch-off voltage

V

DS

= 5 V,

V

G2S

= 4 V,

I

D

= 20 µA

V

G1S(p)

AC characteristics

Forward transconductance

V

DS

= 5 V,

I

D

= 10 mA,

V

G2S

= 4 V

g

fs

31- - mS

2.5 -Gate 1 input capacitance

V

DS

= 5 V,

I

D

= 10 mA,

V

G2S

= 4 V,

f

= 1 MHz

C

g1ss

- pF

1.1 --

C

dss

Output capacitance

V

DS

= 5 V,

I

D

= 10 mA,

V

G2S

= 4 V,

f

= 1 MHz

Noise figure

V

DS

= 5 V,

I

D

= 10 mA, f = 800 MHz

F

- 2 - dB

Semiconductor Group 2 1998-11-01