Siemens BF2000W Datasheet
BF 2000W
Semiconductor Group
Au -17-19981
Silicon N Channel MOSFET Tetrode
Target data sheet
• Short-channel transistor
with high S/C quality factor
• For low-noise, gain-controlled
input stages up to 1 GHz
VPS05605
4
2
1
3
PackageType Marking Ordering Code Pin Configuration
BF 2000W NDs Q62702-F1772 4 = G2 SOT-3431 = D 2 = S 3 = G1
Maximum Ratings
Parameter
Symbol UnitValue
V
DS
12Drain-source voltage V
30
I
D
mAContinuos drain current
10
±
I
G1/2SM
Gate 1/gate 2 peak source current
Total power dissipation,
T
S
= 76 °C
mW
P
tot
200
Storage temperature - 55 ...+150 °C
T
stg
T
ch
150Channel temperature
Thermal Resistance
≤280
K/WChannel - soldering point
R
thchs
Semiconductor Group 1 1998-11-01
BF 2000W
Semiconductor Group
Au -17-19982
Electrical Characteristics at
T
A
= 25 °C; unless otherwise specified.
Parameter
Symbol Values Unit
typ. max.min.
DC characteristics
Drain-source breakdown voltage
I
D
= 10 µA, -
V
G1S
= 4 V, -
V
G2S
= 4 V
V
(BR)DS
- V-12
Gate 1 source breakdown voltage
±
I
G1S
= 10 mA,
V
G2S
=
V
DS
= 0
±
V
(BR)G1SS
8 12-
±
V
(BR)G2SS
8 12-Gate 2 source breakdown voltage
±
I
G2S
= 10 mA,
V
G1S
= 0 V,
V
DS
= 0 V
nAGate 1 source leakage current
±
V
G1S
= 5 V,
V
G2S
=
V
DS
= 0
±
I
G1SS
-- 50
Gate 2 source leakage current
±
V
G2S
= 5 V,
V
G1S
= 0 V,
V
DS
= 0 V
50- -
±
I
G2SS
µADrain current
V
DS
= 5 V,
V
G1S
= 0 ,
V
G2S
= 4 V
I
DSS
1- -
V-- 0.3
V
G1S(p)
Gate 1-source pinch-off voltage
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 200 µA
Gate 2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 100 µA
- 0.2
V
G2S(p)
-
Semiconductor Group 2 1998-11-01
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