Siemens BF1012 Datasheet
BF 1012
Semiconductor Group
1 Sep-09-1998
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 12V
• Integrated stabilized bias network
VPS05178
2
1
3
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration PackageOrdering Code
3 = G2Q62702-F1487 1 = SMYs 4 = G1 SOT-143BF 1012 2 = D
Maximum Ratings
Parameter Symbol Value Unit
V
DS
16Drain-source voltage V
mA25
I
D
Continuos drain current
Gate 1/gate 2 peak source current 10
±
I
G1/2SM
+
V
G1SE
3Gate 1 (external biasing) V
mW
P
tot
Total power dissipation,
T
S
≤ 76 °C
200
Storage temperature °C-55 ...+150
T
st
g
T
ch
150Channel temperature
Thermal Resistance
≤370
K/WChannel - soldering point
R
thchs
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group 1 1998-11-01
BF 1012
Semiconductor Group
2 Sep-09-1998
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Drain-source breakdown voltage
I
D
= 300 µA, -
V
G1S
= 4 V, -
V
G2S
= 4 V
V-
V
(BR)DS
-16
Gate 1 source breakdown voltage
±
I
G1S
= 10 mA,
V
G2S
=
V
DS
= 0
- 12
±
V
(BR)G1SS
8
Gate 2 source breakdown voltage
±
I
G2S
= 10 mA,
V
G1S
= 0 V,
V
DS
= 0 V
- 1610
±
V
(BR)G2SS
Gate 1 source current
V
G1S
= 6 V,
V
G2S
= 0 V
- - µA60
+
I
G1SS
Gate 2 source leakage current
±
V
G2S
= 8 V,
V
G1S
= 0 V,
V
DS
= 0 V
±
I
G2SS
-- nA50
I
DSS
- 500 µA-Drain current
V
DS
= 12 V,
V
G1S
= 0 ,
V
G2S
= 6 V
I
DSO
8 10Operating current (selfbiased)
V
DS
= 12 V,
V
G2S
= 6 V
mA-
V
G2S(p)
- 0.9 - VGate 2-source pinch-off voltage
V
DS
= 12 V,
I
D
= 100 µA
AC characteristics
Forward transconductance (self biased)
V
DS
= 12 V,
V
G2S
= 6 V, f = 1 kHz
g
fs
- 24 - mS
Gate 1-input capacitance (self biased)
V
DS
= 12 V,
V
G2S
= 6 V, f = 1 MHz
C
g1ss
- 2.1 2.5 pF
Output capacitance (self biased)
V
DS
= 12 V,
V
G2S
= 6 , f = 1 MHz
C
dss
- 0.9 -
Power gain (self biased)
V
DS
= 12 V,
V
G2S
= 6 , f = 800 MHz
G
ps
- 22 - dB
Noise figure (self biased)
V
DS
= 12 V,
V
G2S
= 6 V, f = 800 MHz
F
800
- 1.4 -
Gain control range (self biased)
V
DS
= 12 V,
V
G2S
= 6 V, f = 800 MHz
∆
G
ps
40 50 -
Semiconductor Group 2 1998-11-01
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