Siemens BDP955, BDP953, BDP951 Datasheet

BDP 951

NPN Silicon AF Power Transistors

• For AF drivers and output stages

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Complementary type: BDP952...BDP956 (PNP)

Type Marking Ordering Code Pin Configuration Package

BDP 951 BDP 951 Q62702-D1339 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 953 BDP 953 Q62702-D1341 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 955 PDP 955 Q62702-D1343 1 = B 2 = C 3 = E 4 = C SOT-223

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage
BDP 951
BDP 953
BDP 955
Collector-base voltage
BDP 951
BDP 953
BDP 955
Emitter-base voltage
DC collector current
Peak collector current
Base current

V

V

V
I

C

I

CM

I

B

CEO

CBO

EBO

V

80
100
120

100
120
140

5
3 A
5

200 mA

Peak base current
Total power dissipation,

T

= 99°C

S

Junction temperature
Storage temperature

Thermal Resistance

Junction ambient

1)

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

Semiconductor Group

I
P
T
T

R
R

BM

tot
j
stg

thJA
thJS

500

3 W

150 °C

- 65 ... + 150

≤

42 K/W

≤

17

1 Nov-28-1996

BDP 951

Electrical Characteristics at

T

=25°C, unless otherwise specified

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA,

C

I

= 10 mA,

C

I

= 10 mA,

C

Collector-base breakdown voltage

I

100 µA,

C

I

= 100 µA,

C

I

= 100 µA,

C

I

= 0 mA, BDP 951

B

I

= 0 mA, BDP 953

B

I

= 0 mA, BDP 955

B

I

= 0 , BDP 951

B

I

= 0 , BDP 953

B

I

= 0 , BDP 955

B

Base-emitter breakdown voltage

I

= 10 µA,

E

I

C

= 0

Collector cutoff current

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

80
100
120

100
120
140

-

-

-

-

-

-

5 - -

V

-

-

-

-

-

-

V

= 100 V,

CB

V

= 100 V,

CB

I

= 0 ,

E

I

= 0 ,

E

T

= 25 °C

A

T

= 150 °C

A

Emitter cutoff current

V

= 4 V,

EB

I

C

= 0

DC current gain

I

= 10 mA,

C

I

= 500 mA,

C

I

= 2 A,

C

V

V

CE

= 5 V

CE

V

= 1 V

CE

= 2 V

Collector-emitter saturation voltage 1)

I

= 2 A,

C

I

= 0.2 A

B

Base-emitter saturation voltage 1)

I

= 2 A,

C

I

= 0.2 A

B

AC Characteristics

Transition frequency

I

= 50 mA,

C

V

= 10 V, f = 100 MHz

CE

I

EBO

h

FE

V

CEsat

V

BEsat

f

T

-

-

-

-

100 nA
20

- - 100

25
40
15

-

-

-

­ 475

-

- - 0.8

- - 1.5

- 100 -

µA
nA

-

V

MHz

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

1) Pulse test: t < 300µs; D < 2%

Semiconductor Group

C

cb

pF

- 25 -

2 Nov-28-1996