Siemens BDP948, BDP950 Datasheet

BDP 948

PNP Silicon AF Power Transistor

• For AF drivers and output stages

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Complementary type: BDP947, BDP949 (NPN)

Type Marking Ordering Code Pin Configuration Package

BDP 948 BDP 948 Q62702-D1336 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 950 BDP 950 Q62702-D1338 1 = B 2 = C 3 = E 4 = C SOT-223

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage
BDP 948
BDP 950
Collector-base voltage
BDP 948
BDP 950
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
Junction temperature

T

= 99°C

S

V

V

V
I

C

I

CM

I

B

I

BM

P
T

CEO

CBO

EBO

tot
j

V
45
60

45
60

5
3 A

5
200 mA
500

3 W
150 °C

Storage temperature

Thermal Resistance

Junction ambient

1)

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

Semiconductor Group

T

R
R

stg

thJA
thJS

- 65 ... + 150

≤

42 K/W

≤

17

1 Nov-28-1996

BDP 948

Electrical Characteristics at

T

=25°C, unless otherwise specified

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA,

C

I

= 10 mA,

C

Collector-base breakdown voltage

I

= 100 µA,

C

I

= 100 µA,

C

I

= 0 mA, BDP 948

B

I

= 0 mA, BDP 950

B

I

= 0 , BDP 948

B

I

= 0 , BDP 950

B

Base-emitter breakdown voltage

I

= 10 µA,

E

I

C

= 0

Collector cutoff current

V
V

CB
CB

= 45 V,
= 45 V,

I

= 0 ,

E

I

= 0 ,

E

T

= 25 °C

A

T

= 150 °C

A

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

45
60

45
60

-

-

-

-

5 - -

-

-

-

-

V

-

-

-

-

100 nA
20

µA

Emitter cutoff current

V

= 4 V,

EB

I

C

= 0

DC current gain

I

= 10 mA,

C

I

= 500 mA,

C

I

= 1 A,

C

V

V

CE

= 5 V

CE

V

CE

= 2 V

= 1 V

Collector-emitter saturation voltage 1)

I

= 2 A,

C

I

= 0.2 A

B

Base-emitter saturation voltage 1)

I

= 2 A,

C

I

= 0.2 A

B

AC Characteristics

Transition frequency

I

= 50 mA,

C

V

= 10 V, f = 100 MHz

CE

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

1) Pulse test: t < 300µs; D < 2%

I

EBO

h

FE

V

CEsat

V

BEsat

f

T

C

cb

- - 100

25
85
50

-

-

-

­ 475

-

- - 0.5

- - 1.3

- 100 -

- 40 -

nA

-

V

MHz

pF

Semiconductor Group

2 Nov-28-1996