Siemens BCX79-X, BCX79-VIII, BCX79-VII, BCX79-IX, BCX79 Datasheet

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PNP Silicon AF Transistors BCX 78
BCX 79
High current gain
Low collector-emitter saturation voltage
Low noise at 1 kHz
Low noise at low frequencies
Complementary types: BCX 58, BCX 59 (NPN)
2
3
1
Type Ordering CodeMarking
TO-92 BCX 78-VII BCX 78-VIII BCX 78-IX BCX 78-X BCX 79 BCX 79-VII BCX 79-VIII BCX 79-IX BCX 79-X
Q62702-C717 Q62702-C626 Q62702-C627 Q62702-C628 Q62702-C629 Q62702-C718 Q62702-C630 Q62702-C631 Q62702-C632 Q62702-C633
Pin Configuration
1 2 3
C B E
Package
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
BCX 78
BCX 79
Maximum Ratings Parameter Symbol Values Unit
BCX 78 BCX 79
Collector-emitter voltage V Collector-base voltage VCB0 Emitter-base voltage V Collector current IC mA Peak collector current ICM
Peak base current I Total power dissipation, T
C = 70 ˚C Ptot mW
Junction temperature Tj ˚C Storage temperature range T
CE0 V
32 45 32 45
EB0
5 100 200
BM 200
500 150
stg
– 65 … + 150
Thermal Resistance
Junction - ambient Rth JA 250 K/W Junction - case
1)
Rth JC 160
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 2
Electrical Characteristics
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BCX 78
BCX 79
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 2 mA BCX 78
Collector-base breakdown voltage
C = 10 µA BCX 78
(BR)CB0
V
Emitter-base breakdown voltage
E = 1 µA
Collector cutoff current
VCB = 32 V BCX 78
CB = 45 V BCX 79
V
CB = 32 V, TA = 150 ˚C BCX 78
V
CB = 45 V, TA = 150 ˚C BCX 79
V
CB = 32 V, VBE = 0.2 V,TA = 100 ˚C
V
CB = 45 V, VBE = 0.2 V,TA = 100 ˚C
V
EB = 4 V
V
DC current gain
C = 10 µA, VCE = 5 V
V
(BR)EB0 5––
I
CB0
CE0
I
I
EB0 ––20
FE
h
BCX 78 VII, BCX 79 VII BCX 78 VIII, BCX 79 VIII BCX 78 IX, BCX 79 IX BCX 78 X, BCX 79 X
C = 2 mA, VCE = 5 V
BCX 78 VII, BCX 79 VII BCX 78 VIII, BCX 79 VIII BCX 78 IX, BCX 79 IX BCX 78 X, BCX 79 X
C = 100 mA, VCE = 1 V
1)
BCX 78 VII, BCX 79 VII BCX 78 VIII, BCX 79 VIII BCX 78 IX, BCX 79 IX BCX 78 X, BCX 79 X
32 45
32 45
– – – –
– –
20 30 40 100
120 180 250 380
40 45 60 60
– –
– –
– – – –
– –
140 200 270 340
170 250 350 500
– – – –
– –
– –
20 20 10 10
20 20
– – – –
220 310 460 630
– – – –
VCollector-emitter breakdown voltage
nA nA
µA µA
µACollector cutoff current
nAEmitter cutoff current
1)
Pulse test: t 300 µs, D 2%.
Semiconductor Group 3
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