Siemens BCX70K, BCX70J, BCX70H, BCX70G, BCW60FF Datasheet
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NPN Silicon AF Transistors BCW 60
BCX 70
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BCW 61, BCX 71 (PNP)
Type Ordering Code
Marking
(tape and reel)
BCW 60 A
BCW 60 B
BCW 60 C
BCW 60 D
BCW 60 FF
BCW 60 FN
BCX 70 G
BCX 70 H
BCX 70 J
BCX 70 K
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
Q62702-C1517
Q62702-C1497
Q62702-C1476
Q62702-C1477
Q62702-C1529
Q62702-C1567
Q62702-C1539
Q62702-C1481
Q62702-C1552
Q62702-C1571
Pin Configuration
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
BCW 60
BCX 70
Maximum Ratings
Parameter Symbol Values Unit
BCW 60 BCX 70
BCW 60
FF
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Peak collector current ICM
CE0 V
32 45
32
3232 45
EB0
5
100
200
Peak base current IBM 200
Total power dissipation, T
Junction temperature Tj ˚C
Storage temperature range T
S = 71 ˚C Ptot mW
330
150
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
1)
Junction - soldering point R
Rth JA K/W
th JS
≤ 310
≤ 240
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
Electrical Characteristics
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BCW 60
BCX 70
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA BCW 60, BCW 60 FF
BCX 70
Collector-base breakdown voltage
C = 10 µA BCW 60, BCW 60 FF
(BR)CB0
V
BCX 70
Emitter-base breakdown voltage
E = 1 µA
Collector cutoff current
VCB = 32 V BCW 60, BCW 60 FF
CB = 45 V BCX 70
V
CB = 32 V, TA = 150 ˚C BCW 60, BCW 60 FF
V
CB = 45 V, TA = 150 ˚C BCX 70
V
V
(BR)EB0 5––
I
CB0
32
45
32
45
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
20
20
20
20
VCollector-emitter breakdown voltage
nA
nA
µA
µA
I
EB0 ––20
EB = 4 V
V
DC current gain
C = 10 µA, VCE = 5 V
1)
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
C = 2 mA, VCE = 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
C = 50 mA, VCE = 1 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
FE
h
20
20
40
100
120
180
250
380
50
70
90
100
140
200
300
460
170
250
350
500
–
–
–
–
–
–
–
–
220
310
460
630
–
–
–
–
nAEmitter cutoff current
–
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 3
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