Siemens BCX68-25, BCX68-16, BCX68-10, BCX68 Datasheet
NPN Silicon AF Transistors BCX 68
● For general AF applications
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary type: BCX 69 (PNP)
Type Ordering Code
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
Marking
–
CB
CC
CD
(tape and reel)
Q62702-C1572
Q62702-C1864
Q62702-C1865
Q62702-C1866
Pin Configuration
1 2 3
B C E
Package
SOT-89
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 20 V
Collector-base voltage VCB0 25
Emitter-base voltage VEB0 5
Collector current I
C 1A
Peak collector current ICM 2
Base current I
B 100 mA
Peak base current IBM 200
1)
Total power dissipation, T
S = 130 ˚C Ptot 1W
Junction temperature Tj 150 ˚C
Storage temperature range T
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA ≤ 75 K/W
th JS ≤ 20
R
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BCX 68
UnitValuesParameter Symbol
min. typ. max.
V
(BR)CE0 20 – –
C = 30 mA
Collector-base breakdown voltage
C = 10 µA
Emitter-base breakdown voltage
E = 1 µA
Collector cutoff current
CB = 25 V
V
CB = 25 V, TA = 150 ˚C
V
EB = 5 V
V
DC current gain
C = 5 mA, VCE = 10 V
C = 500 mA, VCE = 1 V
1)
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
C = 1 A, VCE = 1 V
Collector-emitter saturation voltage
C = 1 A, IB = 100 mA
Base-emitter voltage
C = 5 mA, VCE = 10 V
C = 1 A, VCE = 1 V
1)
1)
V
(BR)CB0 25 – –
V
(BR)EB0 5––
CB0
I
–
–
I
EB0 ––10
–
–
100
100
hFE
50
85
85
100
160
60
–
–
100
160
250
–
–
375
160
250
375
–
VCEsat – – 0.5
V
BE
–
–
0.6
–
–
1
VCollector-emitter breakdown voltage
nA
µA
µAEmitter cutoff current
–
V
AC characteristics
C = 100 mA, VCE = 5 V, f = 20 MHz
f
T – 100 –
MHzTransition frequency
1)
Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
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