Siemens BCX59X, BCX59VII, BCX59IX, BCX58X, BCX58VII Datasheet
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Semiconductor Group 1
NPN Silicon AF Transistors BCX 58
BCX 59
5.91
Maximum Ratings
Type Ordering CodeMarking
Package
1)
Pin Configuration
BCX 58 VIII
BCX 58 IX
BCX 58 X
BCX 59 VIII
BCX 59 IX
BCX 59 X
Q62702-C619
Q62702-C620
Q62702-C621
Q62702-C623
Q62702-C624
Q62702-C625
– TO-92
C B E
1 2 3
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 V
Peak collector current ICM
Collector current IC mA
Junction temperature Tj ˚C
Total power dissipation, T
C = 70 ˚C Ptot mW
Storage temperature range T
stg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient Rth JA ≤ 250 K/W
100
200
500
150
– 65 … + 150
Emitter-base voltage V
EB0
32 45
32 45
BCX 58 BCX 59
Peak base current I
BM 200
7
Junction - case
2)
Rth JC ≤ 160
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BCX 78, BCX 79 (PNP)
1
2
3
Semiconductor Group 2
BCX 58
BCX 59
Electrical Characteristics
at T
A = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 2 mA BCX 58
BCX 59
V
(BR)CE0
32
45
–
–
–
–
nA
nA
µA
µA
Collector cutoff current
VCB = 32 V BCX 58
V
CB = 45 V BCX 59
V
CB = 32 V, TA = 150 ˚C BCX 58
V
CB = 45 V, TA = 150 ˚C BCX 59
I
CB0
–
–
–
–
–
–
–
–
20
20
10
10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 10 µA BCX 58
BCX 59
V
(BR)CB0
32
45
–
–
–
–
Emitter-base breakdown voltage
I
E = 1 µA
V
(BR)EB0 7––
–
DC current gain
I
C = 10 µA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
I
C = 2 mA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
I
C = 100 mA, VCE = 1 V
1)
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
h
FE
20
20
40
100
120
180
250
380
40
45
60
60
78
145
220
300
170
250
350
500
–
–
–
–
–
–
–
–
220
310
460
630
–
–
–
–
nAEmitter cutoff current
V
EB = 4 V
I
EB0 ––20
µACollector cutoff current
V
CE = 32 V, VBE = 0.2 V,TA = 100 ˚C
V
CE = 45 V, VBE = 0.2 V,TA = 100 ˚C
I
CEX
–
–
–
–
20
20
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
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