Siemens BCP52M, BCP51M, BCP53M Datasheet

BCP 51M ... BCP 53M

1

Semiconductor Group

Au -11-1998

PNP Silicon AF Transistor

• For AF driver and output stages

• High collector current

• Low collector-emitter saturation voltage

• Complementary types: BCP 54M...BCP 56M(NPN)

VPW05980

1

2

3

5

4

Type Marking Ordering Code Pin Configuration Package

SCT-5952 = C 5 = C3 = E1 = BBCP 51M
BCP 52M
BCP 53M

AAs
AEs
AHs

Q62702-C2592
Q62702-C2593
Q62702-C2594

4 n.c.

Maximum Ratings
Parameter

Symbol BCP 53M UnitBCP 52MBCP 51M

V45

V

CEO

60 80Collector-emitter voltage

V

CBO

45 100Collector-base voltage 60

5

V

EBO

5Emitter-base voltage 5

mADC collector current

I

C

1

Peak collector current

I

CM

A1.5

100 mABase current

I

B

Peak base current 200

I

BM

P

tot

1.7 W

Total power dissipation,

T

S

≤ 77 °C

°C150Junction temperature

T

j

Storage temperature

T

stg

-65...+150

Thermal Resistance

R

thJA

≤98

Junction ambient

1)

K/W

Junction - soldering point

R

thJS

≤43

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

Semiconductor Group 1 1998-11-01

BCP 51M ... BCP 53M

2

Semiconductor Group

Au -11-1998

Electrical Characteristics at

T

A

= 25°C, unless otherwise specified.

Symbol

Values UnitParameter

min. max.typ.

DC Characteristics

-

-

-

-

-

-

V
45
60

80

V

(BR)CEO

BCP 51M
BCP 52M
BCP 53M

Collector-emitter breakdown voltage

I

C

= 10 mA,

I

B

= 0

45
60

100

-

-

-

BCP 51M
BCP 52M
BCP 53M

-

-

-

V

(BR)CBO

Collector-base breakdown voltage

I

C

= 100 µA,

I

B

= 0

V

(BR)EBO

5Emitter-base breakdown voltage

I

E

= 10 µA,

I

C

= 0

- -

nA100Collector cutoff current

V

CB

= 30 V,

I

E

= 0

-

I

CBO

-

µA- 20-Collector cutoff current

V

CB

= 30 V,

I

E

= 0 ,

T

A

= 150 °C

I

CBO

- -25 -

h

FE

DC current gain 1)

I

C

= 5 mA,

V

CE

= 2 V

250

h

FE

-40DC current gain 1)

I

C

= 150 mA,

V

CE

= 2 V

- -

h

FE

25DC current gain 1)

I

C

= 500 mA,

V

CE

= 2 V

0.5-

V

CEsat

Collector-emitter saturation voltage1)

I

C

= 500 mA,

I

B

= 50 mA

- V

1Base-emitter voltage 1)

I

C

= 500 mA,

V

CE

= 2 V

V

BE(ON)

- -

AC Characteristics

f

T

- 100 - MHzTransition frequency

I

C

= 50 mA,

V

CE

= 10 V, f = 100 MHz

1) Pulse test: t ≤ 300µs, D = 2%

Semiconductor Group 2 1998-11-01