Siemens BCP28 Datasheet
PNP Silicon Darlington Transistors BCP 28
BCP 48
● For general AF applications
● High collector current
● High current gain
● Complementary types: BCP 29/49 (NPN)
Type Marking
Ordering Code
Pin Configuration
Package
(tape and reel)
BCP 28
BCP 48
BCP 28
BCP 48
Q62702-C2134
Q62702-C2135
SOT-223
Maximum Ratings
Parameter Symbol
BCP 28 Unit
Collector-emitter voltage V
CE0 30 V
Collector-base voltage VCB0 40
Emitter-base voltage V
EB0
10 10
Collector current IC mA
Peak collector current I
Base current I
CM
B
Values
BCP 48
60
80
500
800
100
1)
Peak base current IBM
Total power dissipation, TS =124 ˚C
2)
Ptot W
Junction temperature T
Storage temperature range T
j ˚C
stg – 65 … + 150
200
1.5
150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 75 K/W
Junction - soldering point Rth JS ≤ 17
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BCP 28
BCP 48
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 1 mA, IB = 0
BCP 28
BCP 48
Collector-base breakdown voltage
C = 100 µA, IB = 0
1)
(BR)CB0
V
BCP 28
BCP 48
V
Emitter-base breakdown voltage
E = 10 µA, IC = 0
Collector-base cutoff current
(BR)EB0 10 – –
I
CB0
VCB = 30 V, IE = 0 BCP 28
CB = 60 V, IE = 0 BCP 48
V
CB = 30 V, IE = 0, TA = 150 ˚C BCP 28
V
CB = 60 V, IE = 0, TA = 150 ˚C BCP 48
V
EB = 4 V, IC = 0
V
DC current gain
C = 100 µA, VCE = 1 V BCP 28
1)
I
EB0 – – 100
BCP 48
C = 10 mA, VCE = 5 V BCP 28
BCP 48
C = 100 mA, VCE = 5 V BCP 28
BCP 48
C = 500 mA, VCE = 5 V BCP 28
BCP 48
30
60
40
80
–
–
–
–
4000
2000
10000
4000
20000
10000
4000
2000
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
100
10
10
–
–
–
–
–
–
–
–
VCollector-emitter breakdown voltage
nA
nA
µA
µA
nAEmitter-base cutoff current
–hFE
V
CEsat – – 1.0
C = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage
C = 100 mA, IB = 0.1 mA
V
BEsat – – 1.5
VCollector-emitter saturation voltage
1)
Pulse test conditions: t ≤ 300 µs, D 2%.
Semiconductor Group 2
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