Siemens BC877, BC875, BC879 Datasheet
NPN Silicon Darlington Transistors BC 875
… BC 879
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BC 876, BC 878
BC 880 (PNP)
Type Ordering CodeMarking
Pin Configuration
Package
1 2 3
BC 875
BC 877
BC 879
– TO-92
C62702-C853
C62702-C854
C62702-C855
E C B
Maximum Ratings
Parameter Symbol Values Unit
BC 875 BC 877
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC A
Peak collector current ICM
CE0 V
45 60
60 80
EB0
5
1
2
BC 879
80
100
Base current IB mA100
Peak base current I
Total power dissipation, T
C = 90 ˚C
BM 200
2)
Ptot W
0.8 (1)
1)
Junction temperature Tj ˚C
Storage temperature range T
stg
150
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case
1)
For detailed information see chapter Package Outlines.
2)
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, R
3)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
2)
3)
thJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
Semiconductor Group 1
Rth JA ≤ 156 K/W
Rth JC ≤ 75
5.91
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BC 875
… BC 879
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 50 mA
I
BC 875
BC 877
BC 879
Collector-base breakdown voltage
C = 100 µA
I
BC 875
BC 877
BC 879
(BR)CB0
V
45
60
80
60
80
100
–
–
–
–
–
–
–
–
–
–
–
–
Emitter-base breakdown voltage, IE = 100 µA V(BR)EB0 5––
ICE0 – – 500
CE = 0.5 × VCEmax
V
Collector cutoff current
CB = VCBmax
V
VCB = VCBmax, TA = 150 ˚C
I
CB0
–
–
–
–
100
20
DC current gain
C = 150 mA; VCE = 10 V
I
IC = 500 mA; VCE = 10 V
1)
1)
Collector-emitter saturation voltage
IC = 500 mA, IB = 0.5 mA
C = 1 A, IB = 1 mA
I
Base-emitter saturation voltage
1)
1)
V
CEsat
BEsat – – 2.2
V
1000
2000––
–
–
–
–
–
–
1.3
1.8
IC = 1 A; IB = 1 mA
VCollector-emitter breakdown voltage
nACollector cutoff current
nA
µA
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
–hFE
V
AC characteristics
C = 200 mA, VCE = 5 V, f = 20 MHz
I
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 2
f
T – 150 –
MHzTransition frequency
Loading...