Siemens BC860B, BC859C, BC860C, BC858C, BC859B Datasheet
...
PNP Silicon AF Transistors BC 856 ... BC 860
Features
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)
Type Marking
BC 856 A
BC 856 B
BC 857 A
BC 857 B
BC 857 C
BC 858 A
BC 858 B
BC 858 C
BC 859 A
BC 859 B
BC 859 C
BC 860 B
BC 860 C
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
Ordering Code
(tape and reel)
Q62702-C1773
Q62702-C1886
Q62702-C1850
Q62702-C1688
Q62702-C1851
Q62702-C1742
Q62702-C1698
Q62702-C1507
Q62702-C1887
Q62702-C1774
Q62702-C1761
Q62702-C1888
Q62702-C1889
Pin Configuration
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1 04.96
Maximum Ratings
BC 856 ... BC 860
Parameter Symbol
BC 856
Collector-emitter voltage V
CE0 65 V
Collector-base voltage VCB0 80
Collector-emitter voltage V
Emitter-base voltage V
CES 80 50 30
EB0
555
Collector current IC mA
Peak collector current ICM
Peak base current IBM
Peak emitter current IEM
Total power dissipation, TS =71 ˚C Ptot mW
Junction temperature T
Storage temperature range T
j ˚C
stg – 65 … + 150
Values
BC 857
BC 860
45
50
100
200
200
200
330
150
BC 858
BC 859
30
30
Unit
Thermal Resistance
Junction - ambient
1)
Rth JA ≤ 310 K/W
Junction - soldering point Rth JS ≤ 240
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
1)
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BC 856 ... BC 860
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA BC 856
BC 857, BC 860
BC 858, BC 859
Collector-base breakdown voltage
C = 10 µA BC 856
BC 857, BC 860
(BR)CB0
V
BC 858, BC 859
Collector-emitter breakdown voltage
C = 10 µA, VBE = 0 BC 856
BC 857, BC 860
(BR)CES
V
BC 858, BC 859
V
Emitter-base breakdown voltage
E = 1 µA
(BR)EB0 5––
65
45
30
80
50
30
80
50
30
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VCollector-emitter breakdown voltage
Collector cutoff current
CB = 30 V
V
CB = 30 V, TA = 150 ˚C
V
C = 10 µA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
C = 2 mA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
I
h
CB0
FE
–
–
–
–
–
125
220
420
1
–
140
250
480
180
290
520
15
4
–
–
–
250
475
800
nA
µA
–DC current gain
Collector-emitter saturation voltage
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
Base-emitter saturation voltage
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
Base-emitter voltage
C = 2 mA, VCE = 5 V
C = 10 mA, VCE = 5 V
1)
1)
V
V
V
CEsat
BEsat
BE(on)
–
–
–
–
600
–
75
250
700
850
650
–
mV
300
650
–
–
750
820
Pulse test: t≤ 300 µs, D = 2 %.
Semiconductor Group 3
Loading...