Siemens BC859CW, BC860CW, BC860BW, BC859AW, BC858CW Datasheet

PNP Silicon AF Transistors BC 856W ... BC 860W

Features

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

● Low noise between 30 Hz and 15 kHz

● Complementary types: BC 847W, BC 848W,

BC 849W, BC 850W (NPN)

Type Marking

BC 856 AW
BC 856 BW
BC 857 AW
BC 857 BW
BC 857 CW
BC 858 AW
BC 858 BW
BC 858 CW
BC 859 AW
BC 859 BW
BC 859 CW
BC 860 BW
BC 860 CW

3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs

Ordering Code
(tape and reel)

Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
Q62702-C2301
Q62702-C2302
Q62702-C2303

Pin Configuration

1 2 3

B E C

Package

SOT-323

1)

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1 04.96

Maximum Ratings

BC 856W ... BC 860W

Description Symbol Unit

Collector-emitter voltage V

CEO V

Collector-base voltage VCBO V
Collector-emitter voltage VCES V

Emitter-base voltage V
Collector current I

EBO V

C mA

Collector peak current ICM mA

tot mW

Total power dissipation, T

S =115 ˚C

Junction temperature T
Storage temperature range T

P

j ˚C
stg –65 to 150 ˚C

BC 856W BC 857W

BC 860W

BC 858W
BC 859W

65 45 30
80 50 30
80 50 30
555

100
200
250
150

Thermal Resistance

Junction - ambient

1)

Rth JA ≤ 240 K/W

Junction - soldering point Rth JS ≤ 105 K/W

Semiconductor Group 2

Electrical Characteristics

I

I

I

I
I

I

I

I
I

I

I
I

1)

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BC 856W ... BC 860W

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 10 mA BC 856W

BC 857W, BC 860W
BC 858W, BC 859W

Collector-base breakdown voltage

C = 10 µA BC 856W

BC 857W, BC 860W

(BR)CB0

V

BC 858W, BC 859W

Collector-emitter breakdown voltage

C = 10 µA, VBE = 0 BC 856W

BC 857W, BC 860W

(BR)CES

V

BC 858W, BC 859W

V

Emitter-base breakdown voltage

E = 1 µA

(BR)EB0 5––

65
45
30

80
50
30

80
50
30

–
–
–

–
–
–

–
–
–

–
–
–

–
–
–

–
–
–

VCollector-emitter breakdown voltage

Collector cutoff current

CB = 30 V

V

CB = 30 V, TA = 150 ˚C

V

C = 10 µA, VCE = 5 V

BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW

C = 2 mA, VCE = 5 V

BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW

I

h

CB0

FE

–
–

–
–
–

125
220
420

–
–

140
250
480

180
290
520

15
5

–
–
–

250
475
800

nA

µA

–DC current gain

Collector-emitter saturation voltage

C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA

Base-emitter saturation voltage

C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA

Base-emitter voltage

C = 2 mA, VCE = 5 V
C = 10 mA, VCE = 5 V

1)

1)

V

V

V

CEsat

BEsat

BE(on)

–
–

–
–

600
–

75
250

700
850

650
–

mV
300
650

–
–

750
820

Pulse test: t≤ 300 µs, D = 2 %.

Semiconductor Group 3