NPN Silicon AF Transistors BC 817
BC 818
● For general AF applications
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BC 807, BC 808 (PNP)
Type Ordering CodeMarking
BC 817-16
BC 817-25
BC 817-40
BC 818-16
BC 818-25
BC 818-40
6As
6Bs
6Cs
6Es
6Fs
6Gs
Q62702-C1732
Q62702-C1690
Q62702-C1738
Q62702-C1739
Q62702-C1740
Q62702-C1505
Pin Configuration
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
07.94
BC 817
BC 818
Maximum Ratings
Parameter Symbol Values Unit
BC 817 BC 818
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current I
Peak collector current ICM A
CE0 V
45 25
50 30
EB0
C mA
55
500
1
Base current IB mA100
Peak base current I
Total power dissipation, T
C = 79 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range T
BM 200
330
150
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
1)
Rth JA ≤ 285 K/W
Junction - soldering point Rth JS ≤ 215
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2