Siemens BC817-16W, BC817-40W, BC817-25W, BC818-40W, BC818-25W Datasheet

BC 817-16W

NPN Silicon AF Transistor

• For general AF applications

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Complementary types: BC807W, BC808W (PNP)

Type Marking Ordering Code Pin Configuration Package

BC 817-16W 6As Q62702-C2320 1 = B 2 = E 3 = C SOT-323
BC 817-25W 6Bs Q62702-C2278 1 = B 2 = E 3 = C SOT-323
BC 817-40W 6Cs Q62702-C2321 1 = B 2 = E 3 = C SOT-323
BC 818-16W 6Es Q62702-C2322 1 = B 2 = E 3 = C SOT-323
BC 818-25W 6Fs Q62702-C2323 1 = B 2 = E 3 = C SOT-323
BC 818-40W 6Gs Q62702-C2324 1 = B 2 = E 3 = C SOT-323

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage
BC 817 W
BC 818 W
Collector-base voltage
BC 817 W
BC 818 W
Emitter-base voltage
DC collector current
Peak collector current

V

V

V
I

C

I

CM

CEO

CBO

EBO

V
45
25

50
30

5

500 mA

1 A
Base current
Total power dissipation,

T

= 130°C

S

Junction temperature
Storage temperature

Thermal Resistance

Junction ambient

1)

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group

I
P
T
T

R
R

B

tot
j
stg

thJA
thJS

100 mA
250 mW
150 °C

- 65 ... + 150

≤

215 K/W

≤

80

1 Dec-19-1996

BC 817-16W

Electrical Characteristics at

T

=25°C, unless otherwise specified

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA,

C

I

= 10 mA,

C

I

= 0 , BC 817 W

B

I

= 0 , BC 818 W

B

Collector-base breakdown voltage

I

= 10 µA,

C

I

= 10 µA,

C

I

= 0 , BC 817 W

B

I

= 0 , BC 818 W

B

Base-emitter breakdown voltage

I

= 10 µA,

E

I

C

= 0

Collector-base cutoff current

V
V

CB
CB

= 25 V,
= 25 V,

T

= 25 °C

A

T

= 150 °C

A

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

45
25

50
30

-

-

-

-

5 - -

-

-

-

-

V

-

-

-

-

100 nA
50

µA

Emitter cutoff current

V

= 4 V,

EB

I

C

= 0

DC current gain

I

= 100 mA,

C

I

= 100 mA,

C

I

= 100 mA,

C

I

= 300 mA,

C

I

= 300 mA,

C

I

= 300 mA,

C

V

= 1 V, BC ... 16 W

CE

V

= 1 V, BC ... 25 W

CE

V

= 1 V, BC ... 40 W

CE

V

= 1 V, BC ... 16 W

CE

V

= 1 V, BC ... 25 W

CE

V

= 1 V, BC ... 40 W

CE

Collector-emitter saturation voltage 1)

I

= 500 mA,

C

I

= 50 mA

B

Base-emitter saturation voltage 1)

I

= 500 mA,

C

I

= 50 mA

B

1) Pulse test: t < 300µs; D < 2%

I

EBO

h

FE

V

CEsat

V

BEsat

- - 100

100
160
250
60
100
170

160
250
350

-

-

-

250
400
630

-

-

-

- - 0.7

- - 1.2

nA

-

V

Semiconductor Group

2 Dec-19-1996