Siemens BC 807, BC808 Technical data
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PNP Silicon AF Transistors BC 807
BC 808
● For general AF applications
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BC 817, BC 818 (NPN)
Type Ordering CodeMarking
BC 807-16
BC 807-25
BC 807-40
BC 808-16
BC 808-25
BC 808-40
5As
5Bs
5Cs
5Es
5Fs
5Gs
Q62702-C1735
Q62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-C1504
Q62702-C1692
Pin Configuration
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
BC 807
BC 808
Maximum Ratings
Parameter Symbol Values Unit
BC 807 BC 808
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current I
Peak collector current ICM A
CE0 V
45 25
50 30
EB0
C mA
55
500
1
Base current IB mA100
Peak base current I
Total power dissipation, T
C = 79 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range T
BM 200
330
150
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
1)
Rth JA ≤ 285 K/W
Junction - soldering point Rth JS ≤ 215
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
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