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PNP Silicon AF Transistors BC 807
BC 808
● For general AF applications
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BC 817, BC 818 (NPN)
Type Ordering CodeMarking
BC 807-16
BC 807-25
BC 807-40
BC 808-16
BC 808-25
BC 808-40
5As
5Bs
5Cs
5Es
5Fs
5Gs
Q62702-C1735
Q62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-C1504
Q62702-C1692
Pin Configuration
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
BC 807
BC 808
Maximum Ratings
Parameter Symbol Values Unit
BC 807 BC 808
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current I
Peak collector current ICM A
CE0 V
45 25
50 30
EB0
C mA
55
500
1
Base current IB mA100
Peak base current I
Total power dissipation, T
C = 79 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range T
BM 200
330
150
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
1)
Rth JA ≤ 285 K/W
Junction - soldering point Rth JS ≤ 215
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
Electrical Characteristics
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BC 807
BC 808
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA
BC 807
BC 808
Collector-base breakdown voltage
C = 100 µA
BC 807
(BR)CB0
V
BC 808
45
25
50
30
–
–
–
–
–
–
–
–
VCollector-emitter breakdown voltage
Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 5––
Collector cutoff current
CB = 25 V
V
CB = 25 V, TA = 150 ˚C
V
I
CB0
–
–
–
–
100
50
nA
µA
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
DC current gain
C = 100 mA; VCE = 1 V
C = 300 mA; VCE = 1 V
Collector-emitter saturation voltage
C = 500 mA; IB = 50 mA
Base-emitter saturation voltage
C = 500 mA; IB = 50 mA
1)
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
1)
1)
100
160
250
60
100
170
160
250
350
–
–
–
250
400
630
–
–
–
VCEsat – – 0.7
VBEsat ––2
–hFE
V
AC characteristics
C = 50 mA, VCE = 5 V, f = 20 MHz
CB = 10 V, f = 1 MHz
V
Input capacitance
EB = 0.5 V, f = 1 MHz
V
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 3
f
T – 200 –
C
obo –10–
C
ibo –60–
MHzTransition frequency
pFOutput capacitance
BC 807
BC 808
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Transition frequency fT = f (IC)
CE = 5 V
V
Permissible pulse load P
tot max/Ptot DC = f (tp)
Collector cutoff current I
CB0 = 25 V
V
CB0 = f (TA)
Semiconductor Group 4
BC 807
BC 808
Base-emitter saturation voltage
C = f (VBEsat)
I
FE = 10
h
Collector-emitter saturation voltage
C = f (VCEsat)
I
FE = 10
h
DC current gain hFE = f (IC)
CE = 1 V
V
Semiconductor Group 5
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