Siemens BAT 15- R Technical data

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Silicon Schottky Diodes BAT 15- … R
Beam lead technology
Low dimension
High performance
Low barrier
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Ordering CodeMarking
Pin Configuration
Package
1)
Maximum Ratings Parameter Symbol Unit
BAT 15-020 R BAT 15-050 R
Forward current I
F 100 mA
Values
BAT 15-090 R BAT 15-110 R
50 Junction temperature Tj 175 ˚C Storage temperature range
stg – 65 … + 150
T
Operating temperature range T
1)
For detailed information see chapter Package Outlines.
op – 65 … + 150
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
DC Characteristics
BAT 15- ... R
BAT 15- … R
min. typ. max.
UnitValuesParameter Symbol
R = 0, f = 1 MHz BAT 15-020 R
V
BAT 15-050 R BAT 15-090 R BAT 15-110 R
F = 1 mA BAT 15-020 R
I
BAT 15-050 R BAT 15-090 R BAT 15-110 R
F = 10 mA BAT 15-020 R
I
BAT 15-050 R BAT 15-090 R BAT 15-110 R
IF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
F
f = 3.0 GHz BAT 15-020 R f = 6.0 GHz BAT 15-050 R f = 9.3 GHz BAT 15-090 R f = 16 GHz BAT 15-110 R
F = 10 mA BAT 15-020 R
I
BAT 15-050 R
F = 50 mA BAT 15-090 R
I
BAT 15-110 R
T
C
– – – –
F
V
– – – – – – – –
SSB
F
– – – –
0.30
0.20
0.14
0.10
0.26
0.28
0.30
0.31
0.35
0.39
0.44
0.45
6.0
6.5
6.5
7.0
0.35
0.25
0.15
0.12
– – – – – – – –
– – – –
rf
– – – –
3.5
4.0
7.0
10.0
– – – –
pFDiode capacitance
VForward voltage
dBSingle sideband noise figure
Differential forward resistance
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