Siemens BAT 14- S Technical data
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BAT 14- ...S
BAT 14- … S
Silicon Schottky Diodes BAT 14- … S
● Beam lead technology
● Low dimension
● High performance
● Medium barrier
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering CodeMarking
Pin Configuration
Package
1)
BAT 14-020 S Q62702-D1258–S
BAT 14-050 S Q62702-D1267
Pointed cathode
BAT 14-090 S Q62702-D1275
BAT 14-110 S Q62702-D1284
Maximum Ratings
Parameter Symbol Unit
BAT 14-020 S
BAT 14-050 S
Reverse voltage V
Forward current I
R 4V
F 100 mA
Values
BAT 14-090 S
BAT 14-110 S
4
50
Junction temperature Tj 175 ˚C
Storage temperature range
Operating temperature range T
stg – 65 … + 150
T
op – 65 … + 150
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BAT 14- ...S
BAT 14- … S
Parameter Symbol
DC Characteristics
V
(BR)
R = 10 µA
I
T
C
R = 0, f = 1 MHz BAT 14-020 S
V
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
F
V
F = 1 mA BAT 14-020 S
I
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
F = 10 mA BAT 14-020 S
I
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
min. typ. max.
4––
–
–
–
–
–
–
–
–
–
–
–
–
0.30
0.20
0.14
0.10
0.45
0.47
0.49
0.50
0.55
0.57
0.60
0.65
0.35
0.25
0.15
0.12
–
–
–
–
–
–
–
–
UnitValues
VBreakdown voltage
pFDiode capacitance
VForward voltage
IF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
F
f = 3.0 GHz BAT 14-020 S
f = 6.0 GHz BAT 14-050 S
f = 9.3 GHz BAT 14-090 S
f = 16 GHz BAT 14-110 S
F = 10 mA BAT 14-020 S
I
BAT 14-050 S
F = 50 mA BAT 14-090 S
I
BAT 14-110 S
SSB
F
–
–
–
–
6.0
6.5
6.5
7.0
–
–
–
–
rf
–
–
–
–
3.5
4.0
7.0
10.0
–
–
–
–
dBSingle sideband noise figure
ΩDifferential forward resistance
Semiconductor Group 2
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