Siemens BAS79D, BAS79C, BAS79B, BAS79A Datasheet
Silicon Switching Diodes BAS 79 A
… BAS 79 D
● Switching applications
● High breakdown voltage
● Common cathode
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
Q62702-A914
Q62702-A915
Q62702-A916
Q62702-A917
SOT-223
Maximum Ratings
Parameter Symbol Values
BAS BAS BAS BAS
79 A 79 B 79 C 79 D
Reverse voltage V
R V
Peak reverse voltage VRM
Forward current IF A
Peak forward current IFM
50 100 200 400
50 100 200 400
1
1
1)
Unit
Surge forward current, t = 1
Total power dissipation, T
Junction temperature Tj ˚C
Storage temperature range T
µs IFS 10
2)
S = 114 ˚C
Ptot W
stg
– 65 … + 150
1.2
150
Thermal Resistance
Junction - ambient
2)
Rth JA K/W≤ 170
Junction - soldering point Rth JS ≤ 30
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BAS 79 A
… BAS 79 D
UnitValuesParameter Symbol
min. typ. max.
(BR) = 100 µA BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
Forward voltage
F = 1 A
F = 2 A
R = VR max
V
1)
VR = VR max, TA = 150 ˚C
AC characteristics
R = 0, f = 1 MHz
V
F = 200 mA, IR = 200 mA, RL = 100 Ω
measured at I
R = 20 mA
(BR)
V
50
100
200
400
V
F
–
–
R
I
–
–
C
D –10–
rr –1–
t
–
–
–
–
–
–
–
–
–
–
–
–
1.6
2
1
50
VBreakdown voltage
µAReverse current
pFDiode capacitance
µsReverse recovery time
Test circuit for reverse recovery time
Pulse generator: t
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
p = 5 µs, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns
t
p = VR + IF × Rj C ≤ 1pF
V
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