Siemens BAS70-T1 Datasheet
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HiRel Silicon Schottky Diode BAS 70
Features
HiRel Discrete and Microwave Semiconductor
¥
¥ General-purpose diodes for high-speed switching
¥ Circuit protection
¥ Voltage clamping
¥ High-level detecting and mixing
¥ Hermetically sealed microwave package
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5512/020
T1
ESD: E lectro s tatic d ischarge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAS70-T1 (ql)
see below T1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702A1173
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702A674
Chapter Order Instructions for ordering example)
(see
Table 1 Maximum Ratings
Parameter Symbol Limit Values Unit
Reverse voltage
Forward current
Surge forward current
1)
V
I
F
I
FSM
R
70 V
70 mA
85 mA
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
Junction temperature
Thermal resistance junction-case
1)
t
10 ms, duty cycle = 10 %
Semiconductor Group 1 Draft A03 1998-04-01
P
T
T
T
T
R
tot
op
stg
sol
j
th(j-c)
250 mW
55 to + 150
65 to + 150
+ 250
150
C
C
C
C
100 K/W
Electrical Characteristics
m
m
W
BAS 70
Table 2 DC Characteristics at
T
= 25 ° C unless otherwise specified
A
Parameter Symbol Limit Values Unit
min. typ. max.
Reverse current 1,
Reverse current 2,
Forward voltage 1,
Forward voltage 2,
Forward voltage 3,
Differential forward resistance
I
= 10 mA,
F2
2)
R
FD
I
F3
DV
---------------------
510
´
Table 3 AC Characteristics at
V
= 70 V
R
V
= 56 V
R
I
= 1 mA
F1
I
= 10 mA
F2
I
= 15 mA
F3
= 15 mA
F
W=
3Ð
I
R1
I
R2
V
F1
V
F2
V
F3
2)
R
FD
T
= 25 ° C unless otherwise specified
A
-- 2
-- 0.1
0.30 0.38 0.44 V
0.60 0.70 0.78 V
0.80 0.85 1.00 V
24 30 32
A
A
Parameter Symbol Limit Values Unit
Total capacitance,
V
= 0 V,
R
f
= 1 MHz
C
min. typ. max.
T
1.2 1.5 2.0 pF
Semiconductor Group 2 Draft A03 1998-04-01
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