BAS70-07W
Semiconductor Group
Ma -26-19981
Silicon Schottky Diode
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Marking Ordering Code Pin ConfigurationType Package
BAS70-07W 3 = A2 4 = A1 SOT-34377s Q62702-A1186 2 = C21 = C1
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
70 V
Forward current
I
F
70 mA
Surge forward current (t< 100µs)
I
FSM
100
Total power dissipation,
T
S
≤ 91 °C
P
tot
250 mW
Junction temperature
T
j
150 °C
Operating temperature range
T
op
- 55 ...+150
Storage temperature
T
stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
≤ 285 K/W
Junction - soldering point
R
thJS
≤ 145
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAS70-07W
Semiconductor Group
Ma -26-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
V
(BR)
70 - - VBreakdown voltage
I
(BR)
= 10 µA
Reverse current
V
R
= 50 V
V
R
= 70 V
I
R
- -
0.1
10
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F
300
600
750
375
705
880
410
750
1000
V
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- 1.5 2 pF
Charge carrier life time
I
F
= 25 mA
τ - - 100 ps
Differential forward resistance
I
F
= 10 mA, f = 10 kHz
r
f
- 34 - Ω
Series inductance
L
s
- 2 - nH
Semiconductor Group 2 1998-11-01
BAS70-07W
Semiconductor Group
Ma -26-19983
Forward current
I
F
= f (
T
A
*;
T
S
)
* Package mounted on epoxy
0 20 40 60 80 100 120
°C
150
TA,T
S
0
10
20
30
40
50
60
70
80
mA
100
I
F
T
S
T
A
Rectifier voltage
V
out
= f (
V
in
)
f
= 900 MHz
R
L
= parameter in kΩ
10
0
10
1
10
2
10
3
mV
V
in
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
mV
V
out
1000
500
200
100
50
20
R
L
=10
Permissible Pulse Load
R
thJS
= f(
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
= f(
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 3 1998-11-01
BAS70-07W
Semiconductor Group
Ma -26-19984
Forward current
I
F
= f (
V
F
)
T
A
= Parameter
0.0
EHB00042BAS 70W/BAS 170W
Ι
V
F
F
10
-1
-2
10
0
10
1
10
2
10
mA
0.5 1.0 V 1.5
T
A
= -40 C
25 C
85 C
150 C
Reverse current
I
R
= f (
V
R
)
T
A
= Parameter
0
EHB00043
Ι
V
R
R
10
-1
-3
10
0
10
1
10
2
10
A
10
-2
20 40 60 V 80
T
A
= 150 C
85 C
25 C
µ
BAS 70W/BAS 170W
Diode capacitance
C
T
= f (
V
R
)
f
= 1MHz
0
0.0
EHB00044
C
V
R
T
20 40 60 V 80
0.5
1.0
1.5
pF
2.0
BAS 70W/BAS 170W
Differential forward resistance
r
f
= f (
I
F
)
f
= 10 kHz
0.1
10
EHB00045
r
Ι
f
1
10 mA
100
F
0
1
10
2
10
3
10
Ω
BAS 70W/BAS 170W
Semiconductor Group 4 1998-11-01
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