Siemens BAS70-07W Datasheet
BAS70-07W
Semiconductor Group
Ma -26-19981
Silicon Schottky Diode
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Marking Ordering Code Pin ConfigurationType Package
BAS70-07W 3 = A2 4 = A1 SOT-34377s Q62702-A1186 2 = C21 = C1
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
70 V
Forward current
I
F
70 mA
Surge forward current (t< 100µs)
I
FSM
100
Total power dissipation,
T
S
≤ 91 °C
P
tot
250 mW
Junction temperature
T
j
150 °C
Operating temperature range
T
op
- 55 ...+150
Storage temperature
T
stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
≤ 285 K/W
Junction - soldering point
R
thJS
≤ 145
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAS70-07W
Semiconductor Group
Ma -26-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
V
(BR)
70 - - VBreakdown voltage
I
(BR)
= 10 µA
Reverse current
V
R
= 50 V
V
R
= 70 V
I
R
- -
0.1
10
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F
300
600
750
375
705
880
410
750
1000
V
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- 1.5 2 pF
Charge carrier life time
I
F
= 25 mA
τ - - 100 ps
Differential forward resistance
I
F
= 10 mA, f = 10 kHz
r
f
- 34 - Ω
Series inductance
L
s
- 2 - nH
Semiconductor Group 2 1998-11-01
Loading...