Siemens BAS70-06S Datasheet
BAS 70-06S
Semiconductor Group
Sep-07-19981
Silicon Schottky Diode Array
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• Available with CECC quality assessment
VPS05604
6
3
1
5
4
2
Type Marking Ordering Code Pin Configuration Package
BAS 70-06S 76s Q62702-A3469 1/4=C1 2/5=C2 SOT-3633/6=A1/A
2
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
70 V
Forward current
I
F
70 mA
Surge forward current (t< 100µs)
I
FSM
100
Total power dissipation,
T
S
≤ 72 °C
P
tot
250 mW
Junction temperature
T
j
150 °C
Operating temperature range
T
op
- 55 ...+150
Storage temperature
T
st
g
- 55 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
≤ 545
K/W
Junction - soldering point
R
thJS
≤ 310
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAS 70-06S
Semiconductor Group
Sep-07-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter Symbol UnitValues
min. max.typ.
DC characteristics
Breakdown voltage
I
(BR)
= 10 µA
V
(BR)
70 V--
I
R
-
-
-
-
0.1
10
Reverse current
V
R
= 50 V
V
R
= 70 V
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F
300
600
750
375
705
880
410
750
1000
mV
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- 1.6 2 pF
Charge carrier life time
I
F
= 25 mA
τ
- - 100 ps
Differential forward resistance
I
F
= 10 mA, f = 100 MHz
r
f
- 30 -
Ω
Semiconductor Group 2 1998-11-01
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