Siemens BAS70-05W, BAS70-04W, BAS70-06W Datasheet
Silicon Schottky Diode
● General-purpose diodes for
high-speed switching
● Circuit protection
● Voltage clamping
● High-level detection and mixing
BAS 70W
Type Ordering Code Pin Configuration Marking Package
(tape and reel) 1 2 3
BAS 70-04W
BAS 70-05W
BAS 70-06W
Q62702-A1068
Q62702-A1069
Q62702-A1070
A1
A1
C1
C2
A2
C2
C1/A2
C1/C2
A1/A2
74s
75s
76s
SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage
Forward current
Surge forward current,
Total power dissipation
t ≤ 10 ms I
T
≤ 91 °C P
S
Operating temperature range
V
I
T
R
F
FSM
tot
op
70 V
70 mA
100 mA
250 mW
– 55 … + 150 °C
1)
Storage temperature range
T
stg
– 55 … + 150 °C
Thermal Resistance
Junction-ambient
Junction-soldering point
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2Cu.
Semiconductor Group 1 10.94
1)
R
R
th JA
th JS
≤ 455 K/W
≤ 235 K/W
BAS 70W
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
=10µA
(BR)
Forward voltage
I
=1mA
F
I
=10mA
F
I
=15mA
F
Reverse current
V
=50V
R
V
=70V
R
Diode capacitance
V
=0V,f= 1 MHz
R
Charge carrier life time
I
=25mA
F
Differential forward resistance
I
=10mA,f=10kHz
F
Series inductance
V
V
I
C
τ
r
L
R
f
S
(BR)
F
T
V
70 – –
mV
300
600
750
375
705
880
410
750
1000
µA
–
–
–
–
0.1
10
pF
– 1.5 2
ps
– – 100
Ω
–34–
–2–nH
Semiconductor Group 2
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