Siemens BAS70-04S Datasheet
BAS 70-04S
Semiconductor Group
Sep-07-19981
Silicon Schottky Diode Array
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
VPS05604
6
3
1
5
4
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking Ordering Code PackagePin Configuration
74s Q62702-A3468 1/4=A1 2/5=C2 3/6=C1/A2 SOT-363BAS 70-04S
Maximum Ratings
Value UnitParameter Symbol
Diode reverse voltage V70
V
R
70Forward current mA
I
F
Surge forward current (t< 100µs)
100
I
FSM
Total power dissipation,
T
S
≤ 97°C
P
tot
mW250
150 °CJunction temperature
T
j
Operating temperature range -55...+150
T
op
T
st
g
-55...+150Storage temperature
Thermal Resistance
Junction - ambient
1)
R
thJA
K/W
≤ 445
R
thJS
≤ 210
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAS 70-04S
Semiconductor Group
Sep-07-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified
Parameter Symbol UnitValues
typ. max.min.
DC characteristics
V-
V
(BR)
-70Breakdown voltage
I
(BR)
= 10 µA
µA
0.1
10
-
-
-
-
I
R
Reverse current
V
R
= 50 V
V
R
= 70 V
mVForward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
300
600
750
375
705
880
V
F
410
750
1000
AC characteristics
2 pFDiode capacitance
V
R
= 0 V, f = 1 MHz
1.6
C
T
-
100Charge carrier life time
I
F
= 25 mA
τ
ps--
-Forward resistance
I
F
= 10 mA, f = 10 kHz
-
r
f
Ω
30
Semiconductor Group 2 1998-11-01
Loading...