Siemens BAS40-T1 Datasheet
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HiRel Silicon Schottky Diode BAS 40
Features
HiRel Discrete and Microwave Semiconductor
¥
¥ General-purpose diodes for high-speed switching
¥ Circuit protection
¥ Voltage clamping
¥ High-level detecting and mixing
¥ Hermetically sealed microwave package
¥ ESA Qualification pending
T1
ESD: E lectro s tatic d ischarge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAS40-T1 (ql)
see below T1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702A1176
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
Chapter Order Instructions for ordering example)
(see
Table 1 Maximum Ratings
Parameter Symbol Limit Values Unit
Reverse voltage
Forward current
Surge forward current
1)
V
I
F
I
FSM
R
40 V
120 mA
170 mA
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
Junction temperature
Thermal resistance junction-case
1)
t
10 ms, duty cycle = 10 %
Semiconductor Group 1 Draft A03 1998-04-01
P
T
T
T
T
R
tot
op
stg
sol
j
th(j-c)
250 mW
55 to + 150
65 to + 150
+ 250
150
C
C
C
C
100 K/W
Electrical Characteristics
m
m
W
BAS 40
Table 2 DC Characteristics at
T
= 25 ° C unless otherwise specified
A
Parameter Symbol Limit Values Unit
min. typ. max.
Reverse current 1,
Reverse current 2,
Forward voltage 1,
Forward voltage 2,
Forward voltage 3,
Differential forward resistance
I
= 10 mA,
F2
2)
R
FD
I
F3
DV
---------------------
510
´
Table 3 AC Characteristics at
V
= 40 V
R
V
= 30 V
R
I
= 1 mA
F1
I
= 10 mA
F2
I
= 40 mA
F3
= 15 mA
F
W=
3Ð
I
R1
I
R2
V
F1
V
F2
V
F3
2)
R
FD
T
= 25 ° C unless otherwise specified
A
-- 10
-- 1
0.29 0.33 0.39 V
0.42 0.45 0.54 V
0.68 0.7 0.85 V
7.5 10 11.5
A
A
Parameter Symbol Limit Values Unit
Total capacitance,
V
= 0 V,
R
f
= 1 MHz
C
min. typ. max.
T
2.2 2.9 5.0 pF
Semiconductor Group 2 Draft A03 1998-04-01
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