Siemens BAS40-07W Datasheet
BAS 40-07W
Semiconductor Group
Sep-09-19981
Silicon Schottky Diode
Preliminary data
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• Available with CECC quality assessment
VPS05605
4
2
1
3
BAS 40-07W
PackagePin ConfigurationType Marking Ordering Code
4=A1BAS 40-07W 47s 3=A2Q62702- 1=C1 2=C2 SOT-343
Maximum Ratings
Parameter
Value UnitSymbol
V
R
40 VDiode reverse voltage
mA120Forward current
I
F
Surge forward current, t ≤ 10ms
I
FSM
200
P
tot
250
Total power dissipation,
T
S
≤ 81°C
mW
°C
T
j
Junction temperature 150
Operating temperature range - 55 ...+150
T
op
T
stg
- 55 ...+150Storage temperature
Maximum Ratings
K/W
Junction - ambient
1)
R
thJA
≤ 345
Junction - soldering point
R
thJS
≤ 275
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 1998-11-01
BAS 40-07W
Semiconductor Group
Sep-09-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
ValuesSymbol Unit
max.typ.min.
DC characteristics
V-
V
(BR)
40Breakdown voltage
I
(BR)
= 10 µA
-
µA
1
10
-
-
-
-
I
R
Reverse current
V
R
= 30 V
V
R
= 40 V
mVForward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
-
-
-
310
450
720
V
F
380
500
1000
AC characteristics
pF
C
T
-Diode capacitance
V
R
= 0 V, f = 1 MHz
4 5
psCharge carrier life time
I
F
= 25 mA
τ
100--
Differential forward resistance
I
F
= 10 mA, f = 10 kHz
r
f
- 10 -
Ω
Semiconductor Group 2 1998-11-01
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