Siemens BAS40-04W, BAS40-05W, BAS40-06W Datasheet
Silicon Schottky Diode
● General-purpose diodes for
high-speed switching
● Circuit protection
● Voltage clamping
● High-level detecting and mixing
BAS 40W
Type Ordering Code Pin Configuration Marking Package
(tape and reel) 1 2 3
BAS 40-04W
BAS 40-05W
BAS 40-06W
Q62702-A1065
Q62702-A1066
Q62702-A1067
A1
A1
C1
C1
A2
C2
C1/A2
C1/C2
A1/A2
44s
45s
46s
SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage
Forward current
Surge forward current,
Total power dissipation
Junction temperature
t ≤ 10 ms I
T
≤ 106 °C P
S
V
I
T
R
F
FSM
tot
j
40 V
120 mA
200 mA
250 mW
150 °C
1)
Operating temperature range
Storage temperature range
T
op
T
stg
– 55 … + 150 °C
– 55 … + 150 °C
Thermal Resistance
Junction-ambient
Junction-soldering point
1) For detailed information see chapter Package Outlines.
) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2Cu.
Semiconductor Group 1 02.96
2)
R
R
th JA
th JS
≤ 395 K/W
≤ 175 K/W
BAS 40W
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
=10µA
(BR)
Forward voltage
I
=1mA
F
I
=10mA
F
I
=15mA
F
Reverse current
V
=30V
R
V
=40V
R
Diode capacitance
V
=0V,f= 1 MHz
R
Charge carrier life time
I
=25mA τ –10–ps
F
Differential forward resistance
I
=10mA,f=10kHz
F
Series inductance
V
V
I
C
R
L
R
S
(BR)
F
T
F
V
40 – –
mV
250
350
600
310
450
720
380
500
1000
µA
–
–
–
–
1
10
pF
–35
Ω
–10–
–2–nH
Semiconductor Group 2
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