Silicon Schottky Diodes BAS 40 …
● General-purpose diodes for high-speed switching
● Circuit protection
● Voltage clamping
● High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
Marking
(tape and reel)
BAS 40
BAS 40-04
BAS 40-05
BAS 40-06
Q62702-D33943s SOT-23
Q62702-D98044s
Q62702-D97945s
Q62702-D97846s
Pin Configuration
Package
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
BAS 40 …
● General-purpose diodes for high-speed switching
● Circuit protection
● Voltage clamping
● High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BAS 40-07
Q62702-D131447s
SOT-143
Maximum Ratings per Diode
Parameter Symbol Values Unit
Reverse voltage V
R 40 V
Forward current IF 120 mA
Surge forward current, t ≤ 10 ms IFSM 200
Total power dissipation
BAS 40 T
BAS 40-04 … T
S ≤ 81 ˚C
S ≤ 55 ˚C
tot 250 mW
P
Junction temperature Tj 150 ˚C
Operating temperature range T
op – 55 … + 150
1)
Storage temperature range T
stg – 55 … + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
BAS 40
BAS 40-04 …
Junction - soldering point
R
th JS
BAS 40
BAS 40-04 …
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
K/W
≤ 345
≤ 515
≤ 275
≤ 375
Electrical Characteristics per Diode
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BAS 40 …
Parameter Symbol
DC characteristics
V
(BR) 40 – –
R = 10 µA
R
I
R = 30 V
V
R = 40 V
V
VF
F = 1 mA
F = 10 mA
F = 40 mA
C
T –45
VR = 0, f = 1 MHz
τ – – 100
F = 25 mA
r
f –10–
F = 10 mA, f = 10 kHz
min. typ. max.
–
–
–
–
–
–
–
310
450
720
1
10
380
500
1000
UnitValues
VBreakdown voltage
µAReverse current
mVForward voltage
pFDiode capacitance
psCharge carrier life time
ΩDifferential forward resistance
Semiconductor Group 3
Characteristics per Diode at Tj = 25 ˚C, unless otherwise specified.
BAS 40 …
Forward current IF = f (VF)
Reverse current IR = f (VR)
Diode capacitance CT = f (VR)
f=1 MHz
Differential forward resistance rf = f (IF)
f=10 kHz
Semiconductor Group 4
Forward current IF = f (TA*; TS)
* Package mounted on epoxy
BAS 40 …
Semiconductor Group 5
Loading...