Siemens BAS28W Datasheet
BAS 28W
Semiconductor Group
Mar-16-19981
Silicon Switching Diode Array
• For high-speed switching applications
• Electrical insulated diodes
VPS05605
4
2
1
3
Type Marking Ordering Code Pin Configuration Package
BAS 28W JTs Q62702-A3466 1 = C1 2 = C2 3 = A2 SOT-3434 = A1
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
V75
Peak reverse voltage
85
V
RM
200
Forward current
I
F
mA
A
I
FS
Surge forward current, t = 1 µs
4.5
Total power dissipation,
T
S
= 103 °C
mW250
P
tot
150
Junction temperature
°C
T
j
Storage temperature
T
stg
- 65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
≤ 460
K/W
Junction - soldering point
R
thJS
≤ 190
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAS 28W
Semiconductor Group
Mar-16-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
ValuesSymbol Unit
max.typ.min.
DC characteristics
V
V
(BR)
Breakdown voltage
I
(BR)
= 10 µA
--85
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
-
-
-
-
-
-
-
-
V
F
715
855
1000
1250
µA
Reverse current
V
R
= 75 V
I
R
1--
Reverse current
V
R
= 25 V,
T
A
= 150 °C
V
R
= 75 V,
T
A
= 150 °C
I
R
-
-
-
-
30
50
AC characteristics
pF
Diode capacitance
V
R
= 0 V, f = 1 MHz
- 2-
C
D
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100 Ω,
measured at
I
R
= 1mA
t
rr
- ns- 6
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns, D = 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω,
t
r
= 0.35ns,
C ≤ 1pF
Semiconductor Group 2 1998-11-01
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