Siemens BAS20, BAS21, BAS19 Datasheet

Silicon Switching Diodes BAS 19

… BAS 21

● High-speed, high-voltage switch

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAS 19
BAS 20
BAS 21

JPs
JRs
JSs

Q62702-A95
Q62702-A113
Q62702-A79

SOT-23

Maximum Ratings
Parameter Symbol Values

Unit

BAS 19 BAS 20 BAS 21

Reverse voltage V
Peak reverse voltage VRM
Forward current IF mA
Peak forward current IFM
Total power dissipation, T

S = 70 ˚C Ptot mW

Junction temperature Tj ˚C
Storage temperature range T

R V

100 150 200
120 200 250

250
625
350
150

stg

– 65 … + 150

1)

Thermal Resistance

Junction - ambient

2)

Junction - soldering point R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2Cu.

Semiconductor Group 1

Rth JA K/W

th JS

≤ 300
≤ 230

07.94

Electrical Characteristics

I

I
I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BAS 19

… BAS 21

UnitValuesParameter Symbol

min. typ. max.

Breakdown voltage

(BR) = 100 µA BAS 19

1)

BAS 20
BAS 21

Forward voltage

F = 100 mA
F = 200 mA

Reverse current

R = VR max

V
VR = VR max; Tj = 150 ˚C

AC characteristics

R = 0 V, f = 1 MHz

V

F = 30 mA, IR = 30 mA, RL = 100 Ω

measured at I

R = 3 mA

(BR)

V

120
200
250

F

V

–
–

R

I

–
–

C

D ––5

rr ––50

t

–
–
–

–
–

–
–

–
–
–

1

1.25

100
100

V

nA

µA

pFDiode capacitance

nsReverse recovery time

Test circuit for reverse recovery time

Pulse generator: t

1)

Pulse test: tp ≤ 300 µs, D = 2 %.

p = 100 ns, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns

t

≤ 1pF

C

Semiconductor Group 2