Siemens BAS170W Datasheet
BAS 170W
Silicon Schottky Diode
l
General-purpose diodes for high-speed switching
l
Circuit protection
l
Voltage clamping
l
High-level detecting and mixing
l
Small package SOD-323
ESD: Electrostastic discharge sensitive device, observe handling precautions!
Type Marking Ordering Code
(tape and reel)
Pin Configuration
1 2
BAS 170W 7 Q62702-A1072 A C SOD-323
Maximum Ratings
Package
1)
Parameter Symbol BAS 170W Unit
Reverse voltage
Forward current
Surge forward current, t ≤ 10 ms
Total Power dissipation TS ≤ 97°C
Operating temperature range
Storage temperature range
V
R 70 V
I
F
I
FSM
P
T
T
tot
op
stg
70 mA
100 mA
250 mW
-55 +150°C °C
-55...+150°C °C
Thermal Resistance
Junction-ambient
Junction-soldering point
1)
R
R
th JA
th JS
≤ 320 K/W
≤ 210 K/W
_________________________________
1) Package mounted on an epoxy pcb 40mm x 40mm x 1.5mm/1cm2 Cu
Semiconductor Group 1 Edition A01, 11.07.94
BAS 170W
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
= 10 µA
(BR)
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 15 mA
F
Reverse current
V
= 50 V
R
= 70 V
V
R
Diode capacitance
V
= 0 V, f = 1 MHz
R
Charge carrier life time
I
= 25 mA
F
Differential forward resistance
I
= 10 mA, f = 10 kHz
F
Series inductance
V
V
I
C
I
R
L
R
S
(BR)
F
T
F
70 - -
300
600
750
-
-
375
705
880
-
-
410
750
1000
0.1
10
- 1.5 2
- - 100
-34-
-2-
V
mV
µA
pF
ps
Ω
nH
Semiconductor Group 2 Edition A01, 11.07.94
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