Siemens BAS16W Datasheet
BAS 16W
Silicon Switching Diode
• For high speed switching applications
Type Marking Ordering Code Pin Configuration Package
BAS 16W A6s Q62702-A1050 1 = A 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total Power dissipation
T
≤ 119 °C
S
Junction temperature
Storage temperature
V
V
I
I
P
T
T
R
RM
F
FS
tot
j
stg
75 V
85
250 mA
4.5
mW
250
150 °C
- 65 ... + 150
Thermal Resistance
Junction ambient
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
1)
R
R
thJA
thJS
≤
260 K/W
≤
125
Semiconductor Group 1 Nov-28-1996
BAS 16W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
= 100 µA
(BR)
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 50 mA
F
I
= 150 mA
F
Reverse current
V
= 70 V,
R
V
= 25 V,
R
V
= 75 V,
R
T
= 25 °C
A
T
= 150 °C
A
T
= 150 °C
A
V
V
I
R
(BR)
F
75 - -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
mV
715
855
1000
1250
µA
1
30
50
AC characteristics
Diode capacitance
V
= 0 V, f = 20 MHz
R
Reverse recovery time
I
= 10 mA,
F
t
measured at 1 mA
rr
I
= 10 mA,
R
R
= 100
L
Ω
C
t
D
pF
- - 2
rr
ns
- - 6
Semiconductor Group 2 Nov-28-1996
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