Siemens BAS16s Datasheet

BAS 16S

Semiconductor Group

Apr-24-19981

Silicon Switching Diode Array

• For high-speed switching applications

• Internal (galvanic) isolated Diodes

in one package

Tape loading orientation

VPS05604

6

3

1

5

4

2

Type Marking Ordering Code Pin Configuration Package

BAS 16S A6s Q62702-A1241 1=A1 2=A2 3=A3 SOT-3634=C3 5=C2 6=C1

Maximum Ratings
Parameter

Symbol Value Unit

Diode reverse voltage

V

R

75 V

Peak reverse voltage

V

RM

85

Forward current

I

F

200 mA

Surge forward current, t = 1 µs

I

FS

4.5 A

Total power dissipation,

T

S

= 85 °C

P

tot

250 mW

Junction temperature

T

j

150 °C

Storage temperature

T

stg

65 ...+150

Thermal Resistance

Junction - ambient

1)

R

thJA

≤ 530 K/W

Junction - soldering point

R

thJS

≤ 260 K/W

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group 1 1998-11-01

BAS 16S

Semiconductor Group

Apr-24-19982

Electrical Characteristics at

T

A

= 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC characteristics

Breakdown voltage

I

(BR)

= 100 µA

V

(BR)

75 - - V

Forward voltage

I

F

= 1 mA

I

F

= 10 mA

I

F

= 50 mA

I

F

= 150 mA

V

F

-

-

-

-

-

-

-

-

715

855
1000
1250

mV

Reverse current

V

R

= 70 V

I

R

- - 2.5 µA

Reverse current

V

R

= 25 V,

T

A

= 150 °C

V

R

= 70 V,

T

A

= 150 °C

I

R

-

-

-

-

30
50

nA

AC characteristics

Diode capacitance

V

R

= 0 V, f = 1 MHz

C

D

- - 2 pF

Reverse recovery time

I

F

= 10 mA,

I

R

= 10 mA,

R

L

= 100 Ω,

measured at

I

R

= 1mA

t

rr

- - 6 ns

Test circuit for reverse recovery time

EHN00016

Ι

F

D.U.T.

Oscillograph

Pulse generator:

t

p

= 100ns, D = 0.05,

t

r

= 0.6ns,

R

i

= 50Ω

Oscillograph: R = 50Ω,

t

r

= 0.35ns,

C ≤ 1pF

Semiconductor Group 2 1998-11-01