BAS 16S
Semiconductor Group
Apr-24-19981
Silicon Switching Diode Array
• For high-speed switching applications
• Internal (galvanic) isolated Diodes
in one package
Tape loading orientation
VPS05604
6
3
1
5
4
2
Type Marking Ordering Code Pin Configuration Package
BAS 16S A6s Q62702-A1241 1=A1 2=A2 3=A3 SOT-3634=C3 5=C2 6=C1
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
75 V
Peak reverse voltage
V
RM
85
Forward current
I
F
200 mA
Surge forward current, t = 1 µs
I
FS
4.5 A
Total power dissipation,
T
S
= 85 °C
P
tot
250 mW
Junction temperature
T
j
150 °C
Storage temperature
T
stg
65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
≤ 530 K/W
Junction - soldering point
R
thJS
≤ 260 K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAS 16S
Semiconductor Group
Apr-24-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
75 - - V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
715
855
1000
1250
mV
Reverse current
V
R
= 70 V
I
R
- - 2.5 µA
Reverse current
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V,
T
A
= 150 °C
I
R
-
-
-
-
30
50
nA
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
D
- - 2 pF
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100 Ω,
measured at
I
R
= 1mA
t
rr
- - 6 ns
Test circuit for reverse recovery time
EHN00016
Ι
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns, D = 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω,
t
r
= 0.35ns,
C ≤ 1pF
Semiconductor Group 2 1998-11-01
BAS 16S
Semiconductor Group
Apr-24-19983
Forward current
I
F
= f (
T
A
*;
T
S
)
* Package mounted on epoxy
0 20 40 60 80 100 120
°C
150
TA,T
S
0
50
100
150
200
mA
300
I
F
5
0 20 40 60 80 100 120
°C
150
TA,T
S
0
50
100
150
200
mA
300
I
F
T
S
0 20 40 60 80 100 120
°C
150
TA,T
S
0
50
100
150
200
mA
300
I
F
T
A
0 20 40 60 80 100 120
°C
150
TA,T
S
0
50
100
150
200
mA
300
I
F
Forward current
I
F
= f
V
F
)
T
A
= 25°C
0
0
EHB00023BAS 16
Ι
0.5 1.0 V 1.5
50
100
mA
150
F
F
V
maxtyp
Permissible Pulse Load
R
thJS
= f(
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
= f(
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 3 1998-11-01
BAS 16S
Semiconductor Group
Apr-24-19984
Forward voltage
V
F
= f (
T
A
)
0
0.5
1.0
0 50 100 150
BAS 16 EHB00025
V
T
A
V
F
C
Ι
F
= 100 mA
10 mA
1 mA
0.1 mA
Reverse current
I
R
= f (
T
A
)
10
10
10
0 50 100 150
BAS 16 EHB00022
nA
T
A
Ι
R
C
10
10
5
4
3
2
1
5
5
5
25 V
70 V
max.
= 70 V
R
V
typ.
Semiconductor Group 4 1998-11-01
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